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Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET |
Lei Xiao-Yi (雷晓艺)a, Liu Hong-Xia (刘红侠)a, Zhang Yue (张月)a, Ma Xiao-Hua (马晓华)a b, Hao Yue (郝跃)a |
a Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi'an 710071, China; b School of Technical Physics, Xidian University, Xi'an 710071, China |
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Abstract The degradation produced by hot carrier (HC) in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor (nMOSFET) has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET (pMOFET) that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET.
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Received: 25 October 2013
Revised: 22 November 2013
Accepted manuscript online:
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606) and the National Natural Science Foundation of China (Grant No. 61106106). |
Corresponding Authors:
Lei Xiao-Yi
E-mail: lydialeixy@163.com
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About author: 73.40.Qv; 85.30.Tv |
Cite this article:
Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Zhang Yue (张月), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET 2014 Chin. Phys. B 23 057305
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