Atomic diffusion in annealed Cu/SiO2/Si (100) system prepared by magnetron sputtering

doi:10.1088/1674-1056/19/2/026601

Abstract Cu thin films are deposited on p-type Si (100) substrates by magnetron sputtering at room temperature. The interface reaction and atomic diffusion of Cu/SiO₂/Si (100) systems are studied by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results can be obtained. The onset temperature of interdiffusion for Cu/SiO₂/Si(100) is 350 ℃. With the annealing temperature increasing, the interdiffusion becomes more apparent. The calculated diffusion activation energy is about 0.91 eV. For the Cu/SiO₂/Si (100) systems copper silicides are not formed below an annealing temperature of 350 ℃. The formation of the copper silicides phase is observed when the annealing temperature arrives at 450 ℃.

Keywords: diffusion interface reaction copper silicides

Received: 07 October 2008
Revised: 04 August 2009
Accepted manuscript online:

PACS:	66.30.Ny	(Chemical interdiffusion; diffusion barriers)
	81.15.Cd	(Deposition by sputtering)
	68.55.A-	(Nucleation and growth)
	82.65.+r	(Surface and interface chemistry; heterogeneous catalysis at surfaces)
	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10375028).

Cite this article:

Cao Bo(曹博), Jia Yan-Hui(贾艳辉), Li Gong-Ping(李公平), and Chen Xi-Meng(陈熙萌) Atomic diffusion in annealed Cu/SiO₂/Si (100) system prepared by magnetron sputtering 2010 Chin. Phys. B 19 026601

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Atomic diffusion in annealed Cu/SiO2/Si (100) system prepared by magnetron sputtering

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Atomic diffusion in annealed Cu/SiO₂/Si (100) system prepared by magnetron sputtering