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Chin. Phys. B, 2008, Vol. 17(8): 3103-3107    DOI: 10.1088/1674-1056/17/8/056
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Trap induced slow photoresponse of single CdS nanoribbons

Wang Fei-Fei(王菲菲)a)b)†, Wang Chong(王翀)c), Cheng Ke(程轲)b), and Zou Bing-Suo(邹炳锁)b)d)
a School of Physics and Electronic Engineering, Ludong University, Yantai 264025, China; b Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; c Institute of Opto-Electronic Information Technology, Yantai University, Yantai 264005, China; d Micro-Nano Technologies Research Center and National Key Laboratory of CBSC, Hunan University, Changsha 410082, China
Abstract  Wurtzite CdS nanoribbons are prepared by using a simple thermal evaporation method. Electron microscopy shows that the ribbons are smooth in surface and uniform in size. Besides the intrinsic emission, the photoluminescence spectrum of a CdS nanoribbon shows a peak at about 580 nm, which may arise from the defect- and the trap- related transitions. The photoresponse of single CdS nanoribbons is researched. When these nanoribbons are exposed to a laser with a wavelength of 400 nm, their conductivity is enhanced greatly. The conductivity of CdS nanoribbons cannot be restored to a value without any illumination even at 5 minutes after the illumination. A model is proposed to explain this phenomenon, which may be due to a slow photoresponse induced by the trap.
Keywords:  CdS      photoresponse  
Received:  14 March 2008      Revised:  25 March 2008      Accepted manuscript online: 
PACS:  78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)  
  61.46.-w (Structure of nanoscale materials)  
  72.40.+w (Photoconduction and photovoltaic effects)  
  73.63.-b (Electronic transport in nanoscale materials and structures)  
  78.55.Et (II-VI semiconductors)  
  81.16.-c (Methods of micro- and nanofabrication and processing)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 20173073), the State Key Development Program for Basic Research of China (Grant No 2002CB713802), the Nano- and Bio-device Key Project of Chinese Academy of Sciences, China, and the 985 Project of Hunan University, China.

Cite this article: 

Wang Fei-Fei(王菲菲), Wang Chong(王翀), Cheng Ke(程轲), and Zou Bing-Suo(邹炳锁) Trap induced slow photoresponse of single CdS nanoribbons 2008 Chin. Phys. B 17 3103

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