Abstract Recently experiments and theories show that the tunnel magnetoresistance (TMR) does not only depend on the ferromagnetic metal electrodes but also on the insulator. Considering the rough-scattering effect and spin-flip effect in the insulator, this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet (FM/I/FM) tunnelling junction by using Slonczewsik's model. A more general expression of TMR ratio as a function of barrier height, interface roughness and spin-flip effect is obtained. In lower barrier case, it shows that the TMR ratio depends on the rough-scattering effect and spin-flip effect.
Received: 07 May 2007
Revised: 23 July 2007
Accepted manuscript online:
PACS:
75.47.-m
(Magnetotransport phenomena; materials for magnetotransport)
Fund: Project
supported by the Program for Excellent Talents in Huaiyin
Teachers College.
Cite this article:
Lu Hong-Xia(陆红霞), Dong Zheng-Chao(董正超), and Fu Hao(付浩) Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction 2008 Chin. Phys. B 17 680
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