The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance
Xuan Kai (宣凯)ab, Yan Xiao-Hong (颜晓红)b, Ding Shu-Long (丁书龙)a, Yang Yu-Rong (杨玉荣)a, Xiao Yang (肖杨)a, Guo Zhao-Hui (郭朝辉)b
a Department of Physics & Institute of Modern Physics, Xiangtan University, Xiangtan 411105, China; b College of Sciences, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
Abstract ZnO micro-prisms are prepared on the p-type and n-type Si substrates, separately. The $I$--$V$ curves analysed by AFM show that the interface junctions between the ZnO micro-prisms and the p-type substrate and between the ZnO micro-prisms and the n-type Si substrate exhibit p--n junction behaviour and ohmic contact behaviour, respectively. The formation of the p--n heterojunction and ohmic contact is ascribed to the intrinsic n-type conduction of ZnO material. Better field emission performance (lower onset voltage and larger emission current) is observed from an individual ZnO micro-prism grown on the n-type Si substrate. It is suggested that the n-Si/n-ZnO interfacial ohmic contact benefits the electron emission; while the p-Si/n-ZnO interface heterojunction deteriorates the electron emission.
Received: 27 July 2005
Revised: 23 November 2005
Accepted manuscript online:
Fund: Project supported by the Scientific and Technological Research Foundation of the State Education Ministry of China (Grant No 204099) and the Program for New Century Excellent Talents in University (Grant No NCET-04-0779).
Cite this article:
Xuan Kai (宣凯), Yan Xiao-Hong (颜晓红), Ding Shu-Long (丁书龙), Yang Yu-Rong (杨玉荣), Xiao Yang (肖杨), Guo Zhao-Hui (郭朝辉) The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance 2006 Chinese Physics 15 460
Enhanced absorption process in the thin active region of GaAs based p-i-n structure Chen Yue(岳琛), Xian-Sheng Tang(唐先胜), Yang-Feng Li(李阳锋), Wen-Qi Wang(王文奇), Xin-Xin Li(李欣欣), Jun-Yang Zhang(张珺玚), Zhen Deng(邓震), Chun-Hua Du(杜春花), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Wei Lu(陆卫), Yang Jiang(江洋), and Hong Chen(陈弘). Chin. Phys. B, 2021, 30(9): 097803.
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