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Chinese Physics, 2004, Vol. 13(7): 1149-1155    DOI: 10.1088/1009-1963/13/7/033
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Study of BaxSr1-xTiO3 thin films using transverse-field Ising model

Tao Yong-Mei (陶永梅)ab, Jiang Qing (蒋青)a
a Department of Physics, Suzhou University, Suzhou 215006, China; b Department of Physics, Changshu Institute of Technology, Changshu 215500, China
Abstract  In this paper, the effects of doping on the thermodynamic properties of Ba$_x$Sr$_{1-x}$TiO$_3$ (BST) thin film are investigated, based on the transverse-field Ising model (TIM) within the framework of mean field theory. We apply the double-peak distribution model of related parameters to mimic doping. The lattice expansion arising from doping with large Ba$^{2+}$ was also taken into account. We concentrate on the doping concentration dependence of peak temperature ($T_{\rm m}$), spontaneous polarization and dielectric susceptibility. It is found that the doping concentration has great influence on the dielectric properties and phase transition properties of BST thin films. We also discuss the quantum effect arising from doping.
Keywords:  BST thin films      critical behaviour      TIM  
Received:  13 November 2003      Revised:  29 December 2003      Accepted manuscript online: 
PACS:  77.55.+f  
  77.84.Dy  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  77.22.Ej (Polarization and depolarization)  
  77.80.Bh  

Cite this article: 

Tao Yong-Mei (陶永梅), Jiang Qing (蒋青) Study of BaxSr1-xTiO3 thin films using transverse-field Ising model 2004 Chinese Physics 13 1149

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