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Chinese Physics, 2004, Vol. 13(4): 561-563    DOI: 10.1088/1009-1963/13/4/027
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

Ji Zhen-Guo (季振国), Zhao Shi-Chao (赵士超), Xiang Yin (向因), Song Yong-Liang (宋永梁), Ye Zhi-Zhen (叶志镇)
State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, China
Abstract  Terbium-doped Zn$_2$SiO$_4$ films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO$_2$. X-ray diffraction (XRD) and UV-Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn$_2$SiO$_4$ in wellimite structure. Photoluminescence measurements of the Tb-doped Zn$_2$SiO$_4$ films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.
Keywords:  zinc silicate      sol-gel      solid-phase reaction      photoluminescence  
Received:  30 June 2003      Revised:  12 November 2003      Accepted manuscript online: 
PACS:  78.55.Hx (Other solid inorganic materials)  
  81.20.Fw (Sol-gel processing, precipitation)  
  78.40.Fy (Semiconductors)  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  78.66.Li (Other semiconductors)  
Fund: Project supported by the Special Funds for Major State Basic Research Project of China (Grant No G2000 0683-06), and the Major Programme of the National Natural Science Foundation of China (Grand No 90201038).

Cite this article: 

Ji Zhen-Guo (季振国), Zhao Shi-Chao (赵士超), Xiang Yin (向因), Song Yong-Liang (宋永梁), Ye Zhi-Zhen (叶志镇) Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction 2004 Chinese Physics 13 561

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