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Chinese Physics, 2003, Vol. 12(5): 562-565    DOI: 10.1088/1009-1963/12/5/319
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev  

Magnetic properties and magnetoresistance of HfFe2Ge2-type Dy1-xGdxMn6Ge6 (x=0.1-0.6) compounds

Zhang Li-Gang (张立刚)a, Wang Ru-Wu (汪汝武)ab, Li Lu (李路)a, Zhang Shao-Ying (张绍英)b, Yao Jin-Lei (姚金雷)bc, Shen Bao-Gen (沈保根)b 
a Department of Applied Physics, University of Science and Technology of Wuhan, Wuhan 430081, China; b State Key Laboratory of Magnetism, Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; c State Key Laboratory of silicon Materials, Zhejiang University, Hangzhou 310027, China
Abstract  The magnetic properties and magnetoresistance effects of Dy$_{1-x}$Gd$_x$Mn$_6$Ge$_6$ (x=0.1-0.6) compounds have been studied by magnetic properties and resistivity measurements in applied magnetic fields up to 5T. The compounds with x=0.1, 0.2, 0.4 and 0.5 order antiferromagnetically at 425, 428, 430 and 432K, respectively, and there are second magnetic phase transitions below 100K. The compound with x=0.6 exhibits a transition from ferrimagnetic to antiferromagnetic, then to ferrimagnetic state again with decreasing temperature. Furthermore, it displays a field-induced metamagnetic transition, and its threshold field decreases with increasing temperature. The magnetoresistance curve of the compound with x=0.6 in applied magnetic fields up to 5T is presented and the magnetoresistance effects are related to the metamagnetic transitions.
Keywords:  magnetic property      magnetoresistance effect  
Received:  20 December 2002      Revised:  15 January 2003      Accepted manuscript online: 
PACS:  75.47.-m (Magnetotransport phenomena; materials for magnetotransport)  
  75.30.Kz (Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.))  
  75.40.-s (Critical-point effects, specific heats, short-range order)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 50071041), and the State Key Development Programme for Basic Research of China (Grant No G1998061303).

Cite this article: 

Zhang Li-Gang (张立刚), Wang Ru-Wu (汪汝武), Li Lu (李路), Zhang Shao-Ying (张绍英), Yao Jin-Lei (姚金雷), Shen Bao-Gen (沈保根) Magnetic properties and magnetoresistance of HfFe2Ge2-type Dy1-xGdxMn6Ge6 (x=0.1-0.6) compounds 2003 Chinese Physics 12 562

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