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Chinese Physics, 2002, Vol. 11(9): 960-962    DOI: 10.1088/1009-1963/11/9/320
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Electroluminescence from Si/SiO2 films deposited on p-Si substrates

Ma Shu-Yi (马书懿)a, Xiao Yong (萧勇)b, Chen Hui (陈辉)a
a Department of Physics, Northwest Normal University, Lanzhou 730070, China; b Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China
Abstract  The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650-660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on EL spectra are studied systematically.
Keywords:  Si/SiO2 film      electroluminescence  
Received:  19 January 2002      Revised:  16 April 2002      Accepted manuscript online: 
PACS:  78.60.Fi (Electroluminescence)  
  78.66.Db (Elemental semiconductors and insulators)  
  78.67.Pt (Multilayers; superlattices; photonic structures; metamaterials)  
  78.40.Fy (Semiconductors)  
  81.15.Cd (Deposition by sputtering)  
  68.65.Ac (Multilayers)  
  61.46.+w  
Fund: Project supported by the Foundation of Education Commission of Gansu Province, China (Grant No 981-17), and the Youth Foundation (Grant No 2001-26) and KJCXGC Foundation (Grant No 2001-2-14) of NWNU.

Cite this article: 

Ma Shu-Yi (马书懿), Xiao Yong (萧勇), Chen Hui (陈辉) Electroluminescence from Si/SiO2 films deposited on p-Si substrates 2002 Chinese Physics 11 960

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