Electroluminescence from Si/SiO2 films deposited on p-Si substrates
Ma Shu-Yi (马书懿)a, Xiao Yong (萧勇)b, Chen Hui (陈辉)a
a Department of Physics, Northwest Normal University, Lanzhou 730070, China; b Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China
Abstract The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650-660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on EL spectra are studied systematically.
Received: 19 January 2002
Revised: 16 April 2002
Accepted manuscript online:
Fund: Project supported by the Foundation of Education Commission of Gansu Province, China (Grant No 981-17), and the Youth Foundation (Grant No 2001-26) and KJCXGC Foundation (Grant No 2001-2-14) of NWNU.
Cite this article:
Ma Shu-Yi (马书懿), Xiao Yong (萧勇), Chen Hui (陈辉) Electroluminescence from Si/SiO2 films deposited on p-Si substrates 2002 Chinese Physics 11 960
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