Please wait a minute...
Chinese Physics, 2001, Vol. 10(13): 4-9    DOI:
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

RESONANT ANDREEV REFLECTION IN HYBRID SUPERCONDUCTING-NORMAL NANOSTRUTURES

Lin Tsung-han (林宗涵)
State Key Laboratory for Mesoscopic Physics Department of Physics, Peking University, Beijing 100871, China
Abstract  After a brief description of hybrid superconducting-normal nanostructures and a brief introduction of the Andreev reflection, we present a theoretical investigation of the electron tunneling through a normal-metal/quantum-dot/superconductor (N-QD-S) system where multiple discrete levels of the QD is considered. By using the nonequilibrium-Green-function (NGF) method, the current I is obtained and studied in detail. We find that the Andreev tunneling shows clear resonant behavior, as obtained in previous works. Moreover, the current I versus the gate voltage Vg exhibits different kinds of peaks, depending on the bias voltage, the level-spacing of the QD, and the energy gap of the superconducting electrode. Besides, in I-V characteristics extra peaks superimposed on the conventional current plateaus emerge, which stem from the resonant Andreev reflections.
Keywords:  transport properties      tunneling phenomena  
Received:  11 February 2001      Accepted manuscript online: 
PACS:  7430F  
  7450  
Fund: Project supported by the Visiting Scholar Foundation of Key State Laboratory for Mesoscopic Physics in Peking University and by National Natural Science Foundation of China (Grant No.10074001).

Cite this article: 

Lin Tsung-han (林宗涵) RESONANT ANDREEV REFLECTION IN HYBRID SUPERCONDUCTING-NORMAL NANOSTRUTURES 2001 Chinese Physics 10 4

[1] Cascade excitation of vortex motion and reentrant superconductivity in flexible Nb thin films
Liping Zhang(张丽萍), Zuyu Xu(徐祖雨), Xiaojie Li(黎晓杰), Xu Zhang(张旭), Mingyang Qin(秦明阳), Ruozhou Zhang(张若舟), Juan Xu(徐娟), Wenxin Cheng(程文欣), Jie Yuan(袁洁), Huabing Wang(王华兵), Alejandro V. Silhanek, Beiyi Zhu(朱北沂), Jun Miao(苗君), and Kui Jin(金魁). Chin. Phys. B, 2023, 32(4): 047302.
[2] Device design based on the covalent homocouplingof porphine molecules
Minghui Qu(曲明慧), Jiayi He(贺家怡), Kexin Liu(刘可心), Liemao Cao(曹烈茂), Yipeng Zhao(赵宜鹏), Jing Zeng(曾晶), and Guanghui Zhou(周光辉). Chin. Phys. B, 2021, 30(9): 098504.
[3] Epitaxial growth and transport properties of compressively-strained Ba2IrO4 films
Yun-Qi Zhao(赵蕴琦), Heng Zhang(张衡), Xiang-Bin Cai(蔡祥滨), Wei Guo(郭维), Dian-Xiang Ji(季殿祥), Ting-Ting Zhang(张婷婷), Zheng-Bin Gu(顾正彬), Jian Zhou(周健), Ye Zhu(朱叶), and Yue-Feng Nie(聂越峰). Chin. Phys. B, 2021, 30(8): 087401.
[4] Transport properties of Tl2Ba2CaCu2O8 microbridges on a low-angle step substrate
Sheng-Hui Zhao(赵生辉), Wang-Hao Tian(田王昊), Xue-Lian Liang(梁雪连), Ze He(何泽), Pei Wang(王培), Lu Ji(季鲁), Ming He(何明), and Hua-Bing Wang(王华兵). Chin. Phys. B, 2021, 30(6): 060308.
[5] Enhanced thermoelectric properties in two-dimensional monolayer Si2BN by adsorbing halogen atoms
Cheng-Wei Wu(吴成伟), Changqing Xiang(向长青), Hengyu Yang(杨恒玉), Wu-Xing Zhou(周五星), Guofeng Xie(谢国锋), Baoli Ou(欧宝立), and Dan Wu(伍丹). Chin. Phys. B, 2021, 30(3): 037304.
[6] Transport property of inhomogeneous strained graphene
Bing-Lan Wu(吴冰兰), Qiang Wei(魏强), Zhi-Qiang Zhang(张智强), and Hua Jiang(江华). Chin. Phys. B, 2021, 30(3): 030504.
[7] First principles calculations on the thermoelectric properties of bulk Au2S with ultra-low lattice thermal conductivity
Y Y Wu(伍义远), X L Zhu(朱雪良), H Y Yang(杨恒玉), Z G Wang(王志光), Y H Li(李玉红), B T Wang(王保田). Chin. Phys. B, 2020, 29(8): 087202.
[8] Exploring how hydrogen at gold-sulfur interface affects spin transport in single-molecule junction
Jing Zeng(曾晶), Ke-Qiu Chen(陈克求), Yanhong Zhou(周艳红). Chin. Phys. B, 2020, 29(8): 088503.
[9] Single crystal growth, structural and transport properties of bad metal RhSb2
D S Wu(吴德胜), Y T Qian(钱玉婷), Z Y Liu(刘子懿), W Wu(吴伟), Y J Li(李延杰), S H Na(那世航), Y T Shao(邵钰婷), P Zheng(郑萍), G Li(李岗), J G Cheng(程金光), H M Weng(翁红明), J L Luo(雒建林). Chin. Phys. B, 2020, 29(3): 037101.
[10] Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles
Ya-Lin Li(李亚林), Pei Gong(龚裴), Xiao-Yong Fang(房晓勇). Chin. Phys. B, 2020, 29(3): 037304.
[11] Growth and transport properties of topological insulator Bi2Se3 thin film on a ferromagnetic insulating substrate
Shanna Zhu(朱珊娜), Gang Shi(史刚), Peng Zhao(赵鹏), Dechao Meng(孟德超), Genhao Liang(梁根豪), Xiaofang Zhai(翟晓芳), Yalin Lu(陆亚林), Yongqing Li(李永庆), Lan Chen(陈岚), Kehui Wu(吴克辉). Chin. Phys. B, 2018, 27(7): 076801.
[12] Non-monotonic dependence of current upon i-width in silicon p-i-n diodes
Zheng-Peng Pang(庞正鹏), Xin Wang(王欣), Jian Chen(陈健), Pan Yang(杨盼), Yang Zhang(张洋), Yong-Hui Tian(田永辉), Jian-Hong Yang(杨建红). Chin. Phys. B, 2018, 27(6): 066106.
[13] Multinary diamond-like chalcogenides for promising thermoelectric application
Dan Zhang(张旦), Hong-Chang Bai(白洪昌), Zhi-Liang Li(李志亮), Jiang-Long Wang(王江龙), Guang-Sheng Fu(傅广生), Shu-Fang Wang(王淑芳). Chin. Phys. B, 2018, 27(4): 047206.
[14] Excellent thermal stability and thermoelectric properties of Pnma-phase SnSe in middle temperature aerobic environment
Yu Tang(唐语), Decong Li(李德聪), Zhong Chen(陈钟), Shuping Deng(邓书平), Luqi Sun(孙璐琪), Wenting Liu(刘文婷), Lanxian Shen(申兰先), Shukang Deng(邓书康). Chin. Phys. B, 2018, 27(11): 118105.
[15] Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures
Zhen-Hua Wang(王振华), Xuan P A Gao(高翾), Zhi-Dong Zhang(张志东). Chin. Phys. B, 2018, 27(10): 107901.
No Suggested Reading articles found!