CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles |
Ya-Lin Li(李亚林), Pei Gong(龚裴), Xiao-Yong Fang(房晓勇) |
Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China |
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Abstract According to the one-dimensional quantum state distribution, carrier scattering, and fixed range hopping model, the structural stability and electron transport properties of N-, P-, and As-doped SiC nanowires (N-SiCNWs, P-SiCNWs, and As-SiCNWs) are simulated by using the first principles calculations. The results show that the lattice structure of N-SiCNWs is the most stable in the lattice structures of the above three kinds of doped SiCNWs. At room temperature, for unpassivated SiCNWs, the doping effect of P and As are better than that of N. After passivation, the conductivities of all doped SiCNWs increase by approximately two orders of magnitude. The N-SiCNW has the lowest conductivity. In addition, the N-, P-, As-doped SiCNWs before and after passivation have the same conductivity-temperature characteristics, that is, above room temperature, the conductivity values of the doped SiCNWs all increase with temperature increasing. These results contribute to the electronic application of nanodevices.
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Received: 15 December 2019
Revised: 13 January 2020
Accepted manuscript online:
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PACS:
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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61.72.U-
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(Doping and impurity implantation)
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63.20.dk
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(First-principles theory)
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81.07.Gf
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(Nanowires)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11574261) and the Natural Science Foundation of Hebei Province, China (Grant No. A2015203261). |
Corresponding Authors:
Xiao-Yong Fang
E-mail: fang@ysu.edu.cn
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Cite this article:
Ya-Lin Li(李亚林), Pei Gong(龚裴), Xiao-Yong Fang(房晓勇) Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles 2020 Chin. Phys. B 29 037304
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