EFFECT OF SMALL CLUSTER DIFFUSION DURING TWO-DIMENSIONAL THIN FILM GROWTH ON METAL SURFACE
Wu Feng-min (吴锋民)a, Li Qiao-wen (李巧文)b, Wu Zi-qin (吴自勤)c
a Research Center of Science, Zhejiang University of Technology, Hangzhou 310014, China; b Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310014, China; c Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026, China
Abstract The diffusion of small clusters such as dimers and trimers on metal surface and the growth of two-dimensional thin films are studied by Monte Carlo simulation, using realistic growth model and physical parameters. It is found that small cluster diffusion plays an important role in the process of thin film growth at not very low temperature. It affects not only the island density and the size of islands but also the critical value of saturation occurring during growth of thin films. The effect of small cluster diffusion depends on both the size of critical nucleus and the growth temperature. The simulation results also show that the larger the cluster allowed to diffuse, the easier the saturation that takes place, giving rise to the lower critical coverage of saturation occurring. It is suggested that the effect of small cluster diffusion should be included in establishing the growth models of thin films.
Received: 24 February 2000
Accepted manuscript online:
PACS:
66.30.Fq
(Self-diffusion in metals, semimetals, and alloys)
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 49672095), the Natural Science Foundation of Zhejiang Province, China (Grant No. 198034), and the Foundation of the Engineering Science Center of Zhejiang University of Techn
Cite this article:
Wu Feng-min (吴锋民), Li Qiao-wen (李巧文), Wu Zi-qin (吴自勤) EFFECT OF SMALL CLUSTER DIFFUSION DURING TWO-DIMENSIONAL THIN FILM GROWTH ON METAL SURFACE 2000 Chinese Physics 9 672
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