ELECTRON-INTERFACE PHONON SCATTERING IN ASYMMETRIC SEMICONDUCTOR QUANTUM WELL STRUCTURES
SHI JUN-JIE (史俊杰)
China Center of Advanced Science and Technology (World Laboratory), P. O. Box 8730, Beijing 100080, China, and Department of Physics, Henan ,Normal University, Xinxiang 453002, China
Abstract Electron-interface phonon scattering rates in asymmetric single quantum well and step quantum well structures are calculated by means of the interaction Fr?hlich-like Hamiltonian between an electron and interface optical phonons in a four-layer heterostructure given re-cently. The intrasubband and intersubband electron scattering rates are given as functions of quantum well width, step width and step height. We have found that the electron scattering depends strongly on the potential parameters and the usual selection rules for these tran-sitions are broken down in asymmetric heterostructures; the interface LO modes are more important than the interface TO modes for the electron-interface phonons scattering in het-erostructures; the intrasubband scattering rates are insensitive functions of step width and step height, and the intersubband scattering rates are complicated functions of step height and step width in step quantum wells. Moreover, we have also observed that the scattering rates for intrasubband and intersubband transitions have no obvious changes in the case that the first or second subband energy level crosses the step height in a step quantum well.
Received: 16 June 1994
Accepted manuscript online:
PACS:
63.22.-m
(Phonons or vibrational states in low-dimensional structures and nanoscale materials)
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