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Improved stability of amorphous InGaZnO4 thin-film transistors under negative bias illumination stress with the incorporation of fluorine passivation and metal shielding lines |
| Yuhan Feng(冯雨涵), Nannan Lv(吕楠楠), Huaisheng Wang(王槐生), Mingxiang Wang(王明湘), and Dongli Zhang(张冬利)† |
| School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China |
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Abstract The instability phenomenon under negative bias illumination stress (NBIS) remains a major challenge for the application of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) in active-matrix displays. In this paper, we employ fluorine plasma treatment and a segmented metal cover line approach to enhance the stability of elevated metal metal-oxide (EMMO) a-IGZO TFTs under NBIS. At room temperature, after 15 minutes of fluorine treatment, $\Delta V_{\rm ON}$ decreases from 5.53 V to 2.02 V. This improvement is mainly attributed to the fact that fluorine atoms fill the ionized oxygen vacancies in a-IGZO, thereby reducing the density of defect states in the channel. Further adding 2.0 μm wide metal-covered wires reduces the $\Delta V_{\rm ON}$ to 0.35 V. Under 80 ${^\circ}$C NBIS, the $\Delta V_{\rm ON}$ is limited to 3.79 V. This improvement is mainly attributed to the light-shielding effect of the metal lines and the passivation of oxygen vacancies by fluorine, thereby enhancing device stability under NBIS.
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Received: 16 November 2025
Revised: 15 January 2026
Accepted manuscript online: 03 February 2026
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PACS:
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81.05.Gc
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(Amorphous semiconductors)
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85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 62371327) and the Jiangsu Provincial Key Research and Development Program (Grant No. BE2022058-4). |
Corresponding Authors:
Dongli Zhang
E-mail: dongli_zhang@suda.edu.cn
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Cite this article:
Yuhan Feng(冯雨涵), Nannan Lv(吕楠楠), Huaisheng Wang(王槐生), Mingxiang Wang(王明湘), and Dongli Zhang(张冬利) Improved stability of amorphous InGaZnO4 thin-film transistors under negative bias illumination stress with the incorporation of fluorine passivation and metal shielding lines 2026 Chin. Phys. B 35 058103
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