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Visible transparent β-Ga2O3 solar-blind UV high-performance photodetector for stable high-temperature operation |
| Chao Zhang(张超)1,†, Jinpeng Dong(董瑾鹏)1, Gang Li(李刚)1, Yida Guan(管艺达)2, Jiahao Zhang(张嘉豪)1, Qingyu Wang(王清玉)1, Zhilin Wang(王志林)1, Duo Sun(孙多)1, Yue Sun(孙悦)1, and Lili Wang(王丽丽)1,‡ |
1 Key Laboratory of Advanced Structural Materials, Ministry of Education, and School of Materials Science and Engineering, Changchun University of Technology, Changchun 130012, China; 2 College of Electrical and Computer Engineering, Jilin Jianzhu University, Changchun 130118, China |
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Abstract Transparent ultraviolet (UV) photodetectors have garnered significant interest due to their promising applications in integrated transparent electronics. In this work, a visible transparent solar-blind ultraviolet photodetector with stable crystalline ITO electrodes based on a $\beta$-Ga$_{2}$O$_{3}$ film has been fabricated and characterized from room temperature to 400 $^\circ$C. The results demonstrate that the device maintains excellent thermal stability even at high temperatures up to 400 $^\circ$C and achieves outstanding performance metrics, including a low dark current of 7.5 pA, a superb UV/visible rejection ratio of $7.8 \times 10^{5}$, and a large detectivity of $1.3 \times 10^{15}$ Jones. This overall performance surpasses that of most other reported Ga$_{2}$O$_{3}$-based transparent UV photodetectors. Therefore, the fabricated high-performance transparent $\beta $-Ga$_{2}$O$_{3}$ solar-blind UV photodetector demonstrates considerable potential for applications in advanced transparent electronics under extreme environments.
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Received: 28 October 2025
Revised: 11 December 2025
Accepted manuscript online: 25 December 2025
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PACS:
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61.72.uj
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(III-V and II-VI semiconductors)
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61.80.Ba
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(Ultraviolet, visible, and infrared radiation effects (including laser radiation))
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73.61.Ga
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(II-VI semiconductors)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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| Fund: Project supported by the Natural Science Foundation of Jilin Province, China (Grant No. YDZJ202501ZYTS638) and the Fund of Education Department of Jilin Province (Grant Nos. JJKH20250694KJ and JJKH20250695KJ). |
Corresponding Authors:
Chao Zhang,E-mail:zhangchao@ccut.edu.cn;Lili Wang,E-mail:wanglili@ccut.edu.cn
E-mail: zhangchao@ccut.edu.cn;wanglili@ccut.edu.cn
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Cite this article:
Chao Zhang(张超), Jinpeng Dong(董瑾鹏), Gang Li(李刚), Yida Guan(管艺达), Jiahao Zhang(张嘉豪), Qingyu Wang(王清玉), Zhilin Wang(王志林), Duo Sun(孙多), Yue Sun(孙悦), and Lili Wang(王丽丽) Visible transparent β-Ga2O3 solar-blind UV high-performance photodetector for stable high-temperature operation 2026 Chin. Phys. B 35 056106
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