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Chin. Phys. B, 2026, Vol. 35(5): 056106    DOI: 10.1088/1674-1056/ae311f
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Visible transparent β-Ga2O3 solar-blind UV high-performance photodetector for stable high-temperature operation

Chao Zhang(张超)1,†, Jinpeng Dong(董瑾鹏)1, Gang Li(李刚)1, Yida Guan(管艺达)2, Jiahao Zhang(张嘉豪)1, Qingyu Wang(王清玉)1, Zhilin Wang(王志林)1, Duo Sun(孙多)1, Yue Sun(孙悦)1, and Lili Wang(王丽丽)1,‡
1 Key Laboratory of Advanced Structural Materials, Ministry of Education, and School of Materials Science and Engineering, Changchun University of Technology, Changchun 130012, China;
2 College of Electrical and Computer Engineering, Jilin Jianzhu University, Changchun 130118, China
Abstract  Transparent ultraviolet (UV) photodetectors have garnered significant interest due to their promising applications in integrated transparent electronics. In this work, a visible transparent solar-blind ultraviolet photodetector with stable crystalline ITO electrodes based on a $\beta$-Ga$_{2}$O$_{3}$ film has been fabricated and characterized from room temperature to 400 $^\circ$C. The results demonstrate that the device maintains excellent thermal stability even at high temperatures up to 400 $^\circ$C and achieves outstanding performance metrics, including a low dark current of 7.5 pA, a superb UV/visible rejection ratio of $7.8 \times 10^{5}$, and a large detectivity of $1.3 \times 10^{15}$ Jones. This overall performance surpasses that of most other reported Ga$_{2}$O$_{3}$-based transparent UV photodetectors. Therefore, the fabricated high-performance transparent $\beta $-Ga$_{2}$O$_{3}$ solar-blind UV photodetector demonstrates considerable potential for applications in advanced transparent electronics under extreme environments.
Keywords:  solar-blind UV detector      Ga$_{2}$O$_{3}$ film      transparent      high temperature  
Received:  28 October 2025      Revised:  11 December 2025      Accepted manuscript online:  25 December 2025
PACS:  61.72.uj (III-V and II-VI semiconductors)  
  61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation))  
  73.61.Ga (II-VI semiconductors)  
  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
Fund: Project supported by the Natural Science Foundation of Jilin Province, China (Grant No. YDZJ202501ZYTS638) and the Fund of Education Department of Jilin Province (Grant Nos. JJKH20250694KJ and JJKH20250695KJ).
Corresponding Authors:  Chao Zhang,E-mail:zhangchao@ccut.edu.cn;Lili Wang,E-mail:wanglili@ccut.edu.cn     E-mail:  zhangchao@ccut.edu.cn;wanglili@ccut.edu.cn

Cite this article: 

Chao Zhang(张超), Jinpeng Dong(董瑾鹏), Gang Li(李刚), Yida Guan(管艺达), Jiahao Zhang(张嘉豪), Qingyu Wang(王清玉), Zhilin Wang(王志林), Duo Sun(孙多), Yue Sun(孙悦), and Lili Wang(王丽丽) Visible transparent β-Ga2O3 solar-blind UV high-performance photodetector for stable high-temperature operation 2026 Chin. Phys. B 35 056106

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