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Chin. Phys. B, 2026, Vol. 35(6): 068101    DOI: 10.1088/1674-1056/ae5172
RAPID COMMUNICATION Prev  

Influence mechanism of temperature fluctuation on the growth of adjunct diamond under HPHT conditions

Yadong Li(李亚东)1,3, Minghui Jin(金明辉)1, Lang Xie(谢浪)1, Wenjing Huang(黄文静)1, Qing Zhang(张庆)1, Liangchao Chen(陈良超)4, Chao Fang(房超)4, Rui Wang(王睿)2,†, and Chunlei Du(杜春雷)1,‡
1 School of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, China;
2 Institute for Structure and Function & Department of Physics & Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University, Chongqing 401331, China;
3 Chongqing Jiulongyuan High-tech Industry Group Co., Ltd., Chongqing 400080, China;
4 Key Laboratory of Material Physics of Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450052, China
Abstract  The growth of adjunct crystals significantly impacts the quality of synthetic diamonds, with temperature fluctuations being the primary cause. This study investigates the influence mechanism of temperature fluctuations on the growth of synthetic diamond crystals under high temperature and high pressure (HPHT) conditions through a combination of experimental and numerical simulation approaches. Numerical simulations reveal that ambient temperature variations directly affect the temperature field within the cavity, subsequently altering the carbon solubility in the metal catalyst. Over time, the synthesis process, influenced by varying solubility due to temperature changes, leads to secondary diamond growth, resulting in the formation of adjunct diamonds. This study offers a theoretical explanation of how temperature fluctuations affect the growth of these crystals, providing valuable theoretical guidance for the experimental synthesis of high-quality diamonds in industrial settings.
Keywords:  high temperature and high pressure (HPHT) method      adjunct diamond      temperature fluctuation  
Received:  26 January 2026      Revised:  10 March 2026      Accepted manuscript online:  13 March 2026
PACS:  81.05.ug (Diamond)  
  07.35.+k (High-pressure apparatus; shock tubes; diamond anvil cells)  
Fund: This project was supported by the Natural Science Foundation of Chongqing, China (Grant Nos. CSTB2023NSCQMSX0362 and CSTB2023NSCQ-LZX0100), the Science and Technology Research Program of Chongqing Municipal Education Commission (Grant No. KJZD-K202401403), the Scientific Research Project of the Science and Technology Bureau of Fuling (Grant No. FLKJ2025AAG2003), and the Henan Provincial Natural Science Foundation (Grant No. 252300421475).
Corresponding Authors:  Rui Wang, Chunlei Du     E-mail:  rwang@cqu.edu.cn;305165684@qq.com

Cite this article: 

Yadong Li(李亚东), Minghui Jin(金明辉), Lang Xie(谢浪), Wenjing Huang(黄文静), Qing Zhang(张庆), Liangchao Chen(陈良超), Chao Fang(房超), Rui Wang(王睿), and Chunlei Du(杜春雷) Influence mechanism of temperature fluctuation on the growth of adjunct diamond under HPHT conditions 2026 Chin. Phys. B 35 068101

[1] Fedoseev D V, Vnukov S P, Bukhovets V L and Anikin B A 1986 Surf. Coat. Technol. 28 207
[2] Zhao Y S, Yan F Y and Liu X 2023 Diam. Relat. Mat. 136 110016
[3] Grot S A, Hatfield C W, Gildenblat G S, Badzian A R and Badzian T 1991 Appl. Phys. Lett. 58 1542
[4] Calzaferri G and Rytz R 1996 J. Phys. Chem. 100 11122
[5] Mudryi A V, Larionova T P, Shakin I A, Gusakov G A, Dubrov G A and Tikhonov V V 2004 Semiconductors 38 520
[6] Lin W M, Kato T, Ohmori H and Osawa E 2009 Key. Eng. Mater. 404 131
[7] Chu H Y, Hsu W C and Lin J F 2010 Wear 268 960
[8] Guo Z J, Wang L, Wang K Y, Ren C H, Guo R A, Zhang Y F, TianY M and Wang H X 2021 Appl. Phys. Lett. 118 192104
[9] Chu D L, Ma H A, Zhang Z F, Peng F and Jia X P 2022 Int. J. Refract. Met. Hard Mater. 106 105876
[10] Su L X, Zhao C X, Lou Q, Niu C Y, Fang C, Li Z, Shen C L, Zang J H, Jia X P and Shan C X 2018 Carbon 130 384
[11] Bai R X, Zhu X Y, Yang F, Gao T R, Wang Z R, Yu L Y, Wang J F, Zhou L and Du G X 2022 Chin. Phys. B 31 074203
[12] Yang J, Wang H K, Xie Y J, Zhang Z C, Tang Y, Hou Z Q, Wang C, Li H, Yang Y K, Gao J, Shou D R and Ouyang X P 2025 Optical Materials 168 117450
[13] Shi Z Y, Gao W, Wang Q, Guo H, Tang J, Li Z H, Wen H F, Ma Z M and Liu J 2025 Chin. Phys. B 34 094205
[14] Wu J Z, Xi Y, Li B Y, Lu L E and Ma Y H 2024 Chin. Phys. B 33 090308
[15] Perez G, Marechal A, Chicot G, Lefranc P, Jeannin P O, Eon D and Rouger N 2020 Diam. Relat. Mat. 110 108154
[16] Liao M Y, Sun H Y and Koizumi S 2024 Adv. Sci. 11 2306013
[17] Liu J W, Teraji T, Da B and Koide Y 2024 Appl. Phys. Lett. 124 072103
[18] Li Y D, Cheng Y S, Su M J, Ran Q F, Wang C X, Ma H A, Fang C and Chen L C 2020 Chin. Phys. B 29 078101
[19] Wang Z W, Wang Z Q, Liu Y, Zhao H, Li B W, Guo Q Y, Xu A K, Ma H A, Chen L C and Jia X P 2024 Int. J. Refract. Met. Hard Mat. 120 106608
[20] Ekimov E A, Sidorov V A, Chtchelkatchev N M, Lyapin S G and Khmelnitsky R A 2024 Diam. Relat. Mat. 142 110784
[21] Shao T, Lyu F, Liu T Q, Yi L C, Chen Q and Shen A H 2024 Carbon 218 118730
[22] Chen L C, Miao X Y, Zhang Z F, Wan B, Zhang Y W, Wang Q Q, Guo L S and Fang C 2025 Chin. Phys. B 34 086103
[23] Teng Y, Wang C X, Wang S X, Chen L C, Li Y D, Wang J, Ma H A and Jia X P 2022 CrystEngComm 24 6198
[24] Dossa S S, Ponomarev I, Feigelson B N, Hainke M, Kranert C, Friedrich J and Derby J J 2023 J. Cryst. Growth 609 127150
[25] Wang Z W, Wang Z Q, Liu Y, Li B W, Zhao H Y, Guo Q Y, Ma H A and Jia X P 2024 Diam. Relat. Mat. 145 111073
[26] Miao X Y, Chen L C, Wang C X, Zhang Z F, Liu G and Fang C 2025 Cryst. Growth Des. 25 760
[27] Song Y W, Fang C, Mu Y H, Li Y D, Shen W X, Zhang Z F, Zhang Y W, Wang Q Q, Wan B, Chen L C and Jia X P 2023 CrystEngComm 25 357
[28] Razgulov A A, Lyapin S G, Novikov A P and Ekimov E A 2021 Diam. Relat. Mat. 116 108379
[29] Srimongkon K, Ohmagari S, Kato Y, Amomkitbamrung V and Shikata S 2016 Diam. Relat. Mat. 63 21
[30] Shen T T, Wang W H, Chen L C, Zhang Z F, Zhang Y W, Wang Q Q, Wan B, Li Y D, Du C L and Fang C 2025 CrystEngComm 27 4591
[31] Li R, Ding M M and Shi T F 2018 J. Cryst. Growth 491 111
[32] Li R, Wang Y F, Liu J, Jia X P and Ma H A 2020 Diam. Relat. Mat. 101 107593
[33] Li Y D, Jia X P, Chen N, Chen L C, Guo L S, Wang C X, Li G, Sun S S and Ma H A 2017 CrystEngComm 19 137
[34] Huang G F, Chen L C and Fang C 2024 Chin. Phys. B 33 068102
[35] Li H B, Wang W H, Li Y D, Chen L C, Zhang Z F, Zhang Y W, Wang Q Q, Wan B, Du C L and Fang C 2025 Chin. Phys. B 34 118101
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