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Effect of trace oxygen on plasma nitriding of titanium foil |
Hai-Tao Zhou(周海涛)1, Xi-Ya Xiong(熊希雅)1, Ke-Xin Ma(马可欣)1, Bing-Wei Luo(罗炳威)1, Fei Luo(罗飞)1, and Cheng-Min Shen(申承民)2,† |
1 Beijing Institute of Aeronautical Materials, Aero Engine Corporation of China, Beijing 100095, China; 2 Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract Titanium nitride films are prepared by plasma enhanced chemical vapor deposition method on titanium foil using N$_{2}$ as precursor. In order to evaluate the effect of oxygen on the growth of titanium nitride films, a small amount of O$_{2}$ is introduced into the preparation process. The study indicates that trace O$_{2}$ addition into the reaction chamber gives rise to significant changes on the color and micro-morphology of the foil, featuring dense and long nano-wires. The as-synthesized nanostructures are characterized by various methods and identified as TiN, Ti$_{2}$N, and TiO$_{2}$ respectively. Moreover, the experiment results show that oxide nanowire has a high degree of crystallinity and the nitrides present specific orientation relationships with the titanium matrix.
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Received: 18 January 2024
Revised: 05 March 2024
Accepted manuscript online: 20 March 2024
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PACS:
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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61.46.Km
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(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
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61.46.Df
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(Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))
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Fund: Project supported by the Innovation Funding of Beijing Institute of Aeronautical Materials. |
Corresponding Authors:
Cheng-Min Shen
E-mail: cmshen@iphy.ac.cn
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Cite this article:
Hai-Tao Zhou(周海涛), Xi-Ya Xiong(熊希雅), Ke-Xin Ma(马可欣), Bing-Wei Luo(罗炳威), Fei Luo(罗飞), and Cheng-Min Shen(申承民) Effect of trace oxygen on plasma nitriding of titanium foil 2024 Chin. Phys. B 33 068103
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