INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
In situ luminescence measurements of GaN/Al2O3 film under different energy proton irradiations |
Wenli Jiang(蒋文丽)1, Xiao Ouyang(欧阳潇)1, Menglin Qiu(仇猛淋)1,2,†, Minju Ying(英敏菊)1,2,‡, Lin Chen(陈琳)1,2, Pan Pang(庞盼)2, Chunlei Zhang(张春雷)1,2, Yaofeng Zhang(张耀锋)1,2, and Bin Liao(廖斌)1,2 |
1 Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China; 2 Institute of Radiation Technology, Beijing Academy of Science and Technology, Beijing 100875, China |
|
|
Abstract Ion beam-induced luminescence (IBIL) experiments were performed to investigate the in situ luminescence of GaN/Al$_{2}$O$_{3}$ at varying ion energies, which allowed for the measurement of defects at different depths within the material. The energies of H$^{+}$ were set to 500 keV, 640 keV and 2 MeV, the Bragg peaks of which correspond to the GaN film, GaN/Al$_{2}$O$_{3}$ heterojunction and Al$_{2}$O$_{3}$ substrate, respectively. A photoluminescence measurement at 250 K was also performed for comparison, during which only near band edge (NBE) and yellow band luminescence in the GaN film were observed. The evolution of the luminescence of the NBE and yellow band in the GaN film was discussed, and both exhibited a decrease with the fluence of H$^{+}$. Additionally, the luminescence of F centers, induced by oxygen vacancies, and Cr$^{3+}$, resulting from the $^{2}$E$\,\to^{4}$A$_{2}$ radiative transition in Al$_{2}$O$_{3}$, were measured using 2 MeV H$^{+}$. The luminescence intensity of F centers increases gradually with the fluence of H$^{+}$. The luminescence evolution of Cr$^{3+}$ is consistent with a yellow band center, attributed to its weak intensity, and it is situated within the emission band of the yellow band in the GaN film. Our results show that IBIL measurement can effectively detect the luminescence behavior of multilayer films by adjusting the ion energy. Luminescence measurement can be excited by various techniques, but IBIL can satisfy in situ luminescence measurement, and multilayer structural materials of tens of micrometers can be measured through IBIL by adjusting the energy of the inducing ions. The evolution of defects at different layers with ion fluence can be obtained.
|
Received: 03 September 2023
Revised: 02 January 2024
Accepted manuscript online: 05 January 2024
|
PACS:
|
87.15.mq
|
(Luminescence)
|
|
78.55.Cr
|
(III-V semiconductors)
|
|
81.15.Jj
|
(Ion and electron beam-assisted deposition; ion plating)
|
|
Corresponding Authors:
Menglin Qiu, Minju Ying
E-mail: mlqiu@bnu.edu.cn;mjying@bnu.edu.cn
|
Cite this article:
Wenli Jiang(蒋文丽), Xiao Ouyang(欧阳潇), Menglin Qiu(仇猛淋), Minju Ying(英敏菊), Lin Chen(陈琳), Pan Pang(庞盼), Chunlei Zhang(张春雷), Yaofeng Zhang(张耀锋), and Bin Liao(廖斌) In situ luminescence measurements of GaN/Al2O3 film under different energy proton irradiations 2024 Chin. Phys. B 33 058702
|
[1] DenBaars S P, Feezell D, Kelchner K, Pimputkar S, Pan C C, Yen C C, Tanaka S, Zhao Y J, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck J S and Nakamura S 2013 Acta. Mater. 61 945 [2] Flack T J, Pushpakaran B N and Bayne S B 2016 J. Electron. Mater. 45 2673 [3] Yanagida T, Kato T, Nakauchi D, Okada G and Kawaguchi N 2021 Appl. Phys. Express. 14 082006 [4] Tung L T, Lin K L, Chang E Y, Huang W C, Hsiao Y L and Chiang C H 2009 J. Phys.: Conf. Ser. 187 012021 [5] Reshchikov M A 2011 Phys. Status. Solidi. 8 2136 [6] Reshchikov M A and Morkoç H 2005 J. Appl. Phys. 97 061301 [7] Reshchikov M A, McNamara J D, Helava H, Usikov A and Makarov Y 2018 Sci. Rep. 8 8091 [8] Reshchikov M A 2022 Phys. Status. Solidi. (b) 260 2200488 [9] Popov A I, Lushchik A, Shablonin E, Vasil’chenko E, Kotomin E A, Moskina A M and Kuzovkov V N 2018 Nucl. Instrum. Meth. B 433 93 [10] Kruzhalov A V, Milman I I, Ryabukhin O V, Revkov I G and Litovchenko E N 2010 Radiat. Meas. 45 362 [11] Shablonin E, Popov A I, Prieditis G, Vasil’chenko E and Lushchik A 2021 J. Nucl. Mater. 543 152600 [12] Makhov V N, Lushchik A, Lushchik C B, Kirm M, Vasil’chenko E, Vielhauer S, Harutunyan V V and Aleksanyan E 2008 Nucl. Instrum. Meth. B 266 2949 [13] Malo M, Moroño A and Hodgson E R. 2014 Fusion. Eng. Des. 89 2179 [14] Grygiel C, Moisy F, Sall M, Lebius H, Balanzat E, Madi T, Been T, Marie D and Monnet I 2017 Acta Mater. 140 157 [15] Gonçalves K A, Bitencourt J F S, Mittani J C R and Tatumi S H 2010 IOP Conf. Ser.: Mater. Sci. Eng. 15 012080 [16] Sarasola-Martin I, Correcher V and García-Guinea J 2021 J. Alloys Compd. 886 161262 [17] Nakagawa T, Sakaguchi I, Shibata N, Matsunaga K, Mizoguchi T, Yamamoto T, Haneda H and Ikuhara Y 2007 Acta Mater. 55 6627 [18] Branson J V, Hattar K, Rossi P, Vizkelethy G, Powell C J, HernandezSanchez B and Doyle B L 2011 Nucl. Instrum. Meth. B 269 2326 [19] Townsend P D 2012 Nucl. Instrum. Meth. B 286 35 [20] Huddle J R, Grant P G, Ludington A R and Foster R L 2007 Nucl. Instrum. Meth. B. 261 475 [21] Jiang W, Cheng W, Qiu M, Wu S, Ouyang X, Chen L, Pang P, Ying M and Liao B 2023 Materials 16 2935 [22] Qiu M L, Yin P, Wang G F, Song J G, Luo C W, Wang T S, Zhao G Q, Lv S S, Zhang F S and Liao B 2020 Chin. Phys. B 29 046106 [23] Wang T S, Wang G F, Qiu M L, Cheng W, Zhang J F and Zhao G Q 2021 J. Lumin. 237 118133 [24] Luo C W, Qiu M L, Wang G F, Wang T S, Zhao G Q and Hua Q S 2020 Acta Phys. Sin. 69 102901 (in Chinese) [25] Song Y, Qiu M, Zhang J, Wu Y, Zhou M, Lin X and Wang G 2023 Nucl. Instrum. Meth. B 541 392 [26] Qiu M L, Wang G F, Chu Y J, Zheng L, Xu M and Yin P 2017 Acta Phys. Sin. 66 207801 (in Chinese) [27] Soh C B, Chua S J, Lim H F, Chi D Z, Tripathy S and Liu W 2004 J. Appl. Phys. 96 1341 [28] Reshchikov M A, McNamara J D, Helava H, Usikov A and Makarov Y 2018 Sci. Rep. 8 8091 [29] Liu B, Yuan F, Dierre B, Sekiguchi T, Zhang S, Xu Y and Jiang X 2014 ACS Appl. Mater. Interface 6 14159 [30] Reshchikov M A, Demchenko D O, Usikov A, Helava H and Makarov Y 2014 Phys. Rev. B 90 235203 [31] Monemar B, Paskov P P, Bergman J P, Toropov A A, Shubina T V, Malinauskas T and Usui A 2008 Phys. Status. Solidi. (b) 245 1723 [32] Agulló-López F, Climent-Font A, Muñoz-Martín Á, Olivares J and Zucchiatti A 2016 Prog. Mater. Sci. 76 1 [33] Reshchikov M A and Korotkov R Y 2001 Phys. Rev. B 64 115205 [34] Crespillo M L, Graham J T, Zhang Y and Weber W J 2016 J. Lumin 172 208 [35] Adachi S 2021 Opt. Mater. 114 111000 [36] Lee K H and Crawford J H 1979 Phys. Rev. B 19 3217 [37] Lewis P M, Keerthana N, Deepak H N, Choudhari K S and Kulkarni S D 2021 Curr. Appl. Phys. 32 71 |
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|