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In situ luminescence measurements of GaN/Al$_{\bf 2}$O$_{\bf 3}$ film under different energy proton irradiations |
| Wenli Jiang1, Xiao Ouyang1, Menglin Qiu1,2,†, Minju Ying1,2,‡, Lin Chen1,2, Pan Pang2, Chunlei Zhang1,2, Yaofeng Zhang1,2, and Bin Liao1,2 |
1 Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China;
2 Institute of Radiation Technology, Beijing Academy of Science and Technology, Beijing 100875, China |
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Abstract Ion beam-induced luminescence (IBIL) experiments were performed to investigate the in situ luminescence of GaN/Al$_{2}$O$_{3}$ at varying ion energies, which allowed for the measurement of defects at different depths within the material. The energies of H$^{+}$ were set to 500 keV, 640 keV and 2 MeV, the Bragg peaks of which correspond to the GaN film, GaN/Al$_{2}$O$_{3}$ heterojunction and Al$_{2}$O$_{3}$ substrate, respectively. A photoluminescence measurement at 250 K was also performed for comparison, during which only near band edge (NBE) and yellow band luminescence in the GaN film were observed. The evolution of the luminescence of the NBE and yellow band in the GaN film was discussed, and both exhibited a decrease with the fluence of H$^{+}$. Additionally, the luminescence of F centers, induced by oxygen vacancies, and Cr$^{3+}$, resulting from the $^{2}$E$\,\to^{4}$A$_{2}$ radiative transition in Al$_{2}$O$_{3}$, were measured using 2 MeV H$^{+}$. The luminescence intensity of F centers increases gradually with the fluence of H$^{+}$. The luminescence evolution of Cr$^{3+}$ is consistent with a yellow band center, attributed to its weak intensity, and it is situated within the emission band of the yellow band in the GaN film. Our results show that IBIL measurement can effectively detect the luminescence behavior of multilayer films by adjusting the ion energy. Luminescence measurement can be excited by various techniques, but IBIL can satisfy in situ luminescence measurement, and multilayer structural materials of tens of micrometers can be measured through IBIL by adjusting the energy of the inducing ions. The evolution of defects at different layers with ion fluence can be obtained.
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Received: 03 September 2023
Revised: 02 January 2024
Accepted manuscript online:
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PACS:
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87.15.mq
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(Luminescence)
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78.55.Cr
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(III-V semiconductors)
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81.15.Jj
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(Ion and electron beam-assisted deposition; ion plating)
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Corresponding Authors:
Menglin Qiu,E-mail:mlqiu@bnu.edu.cn;Minju Ying,E-mail:mjying@bnu.edu.cn
E-mail: mlqiu@bnu.edu.cn;mjying@bnu.edu.cn
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Cite this article:
Wenli Jiang, Xiao Ouyang, Menglin Qiu, Minju Ying, Lin Chen, Pan Pang, Chunlei Zhang, Yaofeng Zhang, and Bin Liao In situ luminescence measurements of GaN/Al$_{\bf 2}$O$_{\bf 3}$ film under different energy proton irradiations 2024 Chin. Phys. B 33 058702
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