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Physical mechanism of secondary-electron emission in Si wafers |
| Yanan Zhao(赵亚楠)1,†,‡, Xiangzhao Meng(孟祥兆)1,†, Shuting Peng(彭淑婷)1, Guanghui Miao(苗光辉)2,3, Yuqiang Gao(高玉强)4, Bin Peng(彭斌)1, Wanzhao Cui(崔万照)2, and Zhongqiang Hu(胡忠强)1 |
1 State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
2 College of Aeronautics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
3 National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology(Xi'an), Xi'an 710100, China;
4 Department of Physics, School of Physics and Electronic Information, Anhui Normal University, Wuhu 241000, China |
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Abstract CMOS-compatible RF/microwave devices, such as filters and amplifiers, have been widely used in wireless communication systems. However, secondary-electron emission phenomena often occur in RF/microwave devices based on silicon (Si) wafers, especially in the high-frequency range. In this paper, we have studied the major factors that influence the secondary-electron yield (SEY) in commercial Si wafers with different doping concentrations. We show that the SEY is suppressed as the doping concentration increases, corresponding to a relatively short effective escape depth λ. Meanwhile, the reduced narrow band gap is beneficial in suppressing the SEY, in which the absence of a shallow energy band below the conduction band will easily capture electrons, as revealed by first-principles calculations. Thus, the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.
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Received: 18 September 2023
Revised: 07 November 2023
Accepted manuscript online: 01 December 2023
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PACS:
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79.70.+q
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(Field emission, ionization, evaporation, and desorption)
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85.40.Ry
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(Impurity doping, diffusion and ion implantation technology)
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61.85.+p
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(Channeling phenomena (blocking, energy loss, etc.) ?)
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81.05.Ea
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(III-V semiconductors)
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| Fund: Project supported by the Administration of Science, Technology and Industry of National Defense of China (Grant No. HTKJ2021KL504001), the National Natural Science Foundation of China (Grant Nos. 12004297 and 12174364), the China Postdoctoral Science Foundation (Grant No. 2022M712507), the Fundamental Research Funds for the Central Universities (Grant No. xzy01202003), and the National 111 Project of China (Grant No. B14040). The authors acknowledge the support from the Instrument Analysis Center of Xi’an Jiaotong University. |
Corresponding Authors:
Yanan Zhao
E-mail: zhaoyanan1984@xjtu.edu.cn
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Cite this article:
Yanan Zhao(赵亚楠), Xiangzhao Meng(孟祥兆), Shuting Peng(彭淑婷), Guanghui Miao(苗光辉), Yuqiang Gao(高玉强), Bin Peng(彭斌), Wanzhao Cui(崔万照), and Zhongqiang Hu(胡忠强) Physical mechanism of secondary-electron emission in Si wafers 2024 Chin. Phys. B 33 047901
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