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Influence of carbon sources on the performance of carbon-coated nano-silicon |
Lin Wang(王琳)1,3, Na Li(李娜)2,†, Hao-Sen Chen(陈浩森)1, and Wei-Li Song(宋维力)1 |
1 Institute of Advanced Structure Technology, Beijing Institute of Technology, Beijing 100081, China; 2 State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing, Beijing 100083, China; 3 Tianjin Lishen Battery Joint-Stock Co., Ltd, Tianjin 300384, China |
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Abstract Silicon-based material is an important anode material for next-generation lithium-ion batteries. In order to overcome its shortcomings, carbon coating is often employed to improve the electrochemical performance. However, the carbon source, carbon content, and different contact and mixing schemes between carbon sources and silicon are all complex factors and need to be clarified. In this study, nano-silicon is coated by the chemical vapor deposition method using different carbon sources, such as acetylene, methane, propane, and propylene. Carbon content after coating is designed to stay at the same level to reduce the experimental error. Results show the sample with higher conductivity provides higher cycle performance. Propylene is the best choice of the four carbon sources studied in this work. These results indicate that the selection of the carbon source is an important factor that plays a significant role in electrochemical performance.
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Received: 30 November 2022
Revised: 29 January 2023
Accepted manuscript online: 08 February 2023
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PACS:
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82.47.Aa
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(Lithium-ion batteries)
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65.40.gk
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(Electrochemical properties)
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82.45.Fk
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(Electrodes)
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62.23.Pq
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(Composites (nanosystems embedded in a larger structure))
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Fund: Project supported by Beijing Natural Science Foundation (Grant No. 2182065) and the National Natural Science Foundation of China (Grant No. 11922202). |
Corresponding Authors:
Na Li
E-mail: naali@ustb.edu.cn
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Cite this article:
Lin Wang(王琳), Na Li(李娜), Hao-Sen Chen(陈浩森), and Wei-Li Song(宋维力) Influence of carbon sources on the performance of carbon-coated nano-silicon 2023 Chin. Phys. B 32 108201
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