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Chin. Phys. B, 2012, Vol. 21(11): 117307    DOI: 10.1088/1674-1056/21/11/117307
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO3 buffer layer

Yu Xin-Ge (于欣格), Yu Jun-Sheng (于军胜), Huang Wei (黄伟), Zeng Hong-Juan (曾红娟 )
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  Top-contact organic field-effect transistor (OFET) is fabricated by adopting a pentacene/1,1'-bis(di-4-tolylaminophenyl) cyclohexane (TAPC) heterojunction structure and inserting an MoO3 buffer layer between TAPC organic semiconductor layer and source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage, are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.
Keywords:  organic field-effect transistor (OFET)      MoO3 buffer layer      heterojunction structure      contact resistance  
Received:  18 April 2012      Revised:  08 May 2012      Accepted manuscript online: 
PACS:  73.40.Cg (Contact resistance, contact potential)  
  73.61.Ph (Polymers; organic compounds)  
  73.61.Wp (Fullerenes and related materials)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61071026 and 61177032), the Science of Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 61021061), the Fundamental Research Fund for the Central Universities of Misistry of Education of China (Grant No. ZYGX2010Z004), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090185110020).
Corresponding Authors:  Yu Jun-Sheng     E-mail:  jsyu@uestc.edu.cn

Cite this article: 

Yu Xin-Ge (于欣格), Yu Jun-Sheng (于军胜), Huang Wei (黄伟), Zeng Hong-Juan (曾红娟 ) Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO3 buffer layer 2012 Chin. Phys. B 21 117307

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