| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate |
| Wang Zhang(张望)1,2, Wei-Hua Han(韩伟华)1,2, Xiao-Song Zhao(赵晓松)1,2, Qi-Feng Lv(吕奇峰)1,2, Xiang-Hai Ji(季祥海)4, Tao Yang(杨涛)4, Fu-Hua Yang(杨富华)1,2,3 |
1 Engineering Research Center for Semiconductor Integrated Technology, Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 School of Electronic, Electrical, and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate. Hexagonal InAs nanowires are uniformly grown between face-to-face (111) vertical sidewalls of neighboring Si fingers by metal-organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers, namely an average of 4 nanowires per micrometer. The electrical characteristics with a higher on/off current ratio of 2×105 are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits.
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Received: 19 January 2017
Revised: 21 April 2017
Accepted manuscript online:
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PACS:
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81.05.Ea
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(III-V semiconductors)
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81.07.Gf
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(Nanowires)
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81.16.Dn
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(Self-assembly)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA02005003) and the National Natural Science Foundation of China (Grant Nos. 61376096 and 61327813). |
Corresponding Authors:
Wei-Hua Han, Tao Yang, Fu-Hua Yang
E-mail: weihua@semi.ac.cn;tyang@semi.ac.cn;fhyang@semi.ac.cn
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| About author: 0.1088/1674-1056/26/8/ |
Cite this article:
Wang Zhang(张望), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Qi-Feng Lv(吕奇峰), Xiang-Hai Ji(季祥海), Tao Yang(杨涛), Fu-Hua Yang(杨富华) Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate 2017 Chin. Phys. B 26 088101
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