Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

doi:10.1088/1674-1056/25/7/076102

Abstract We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green's function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength.

Keywords: bilayer graphene Green's function electrical conductivity

Received: 25 January 2016
Revised: 15 March 2016
Accepted manuscript online:

PACS:	61.46.-w	(Structure of nanoscale materials)
	62.25.-g	(Mechanical properties of nanoscale systems)
	61.46.Hk	(Nanocrystals)
	71.10.-w	(Theories and models of many-electron systems)

Corresponding Authors: E Lotfi
E-mail: lotfi.erf@gmail.com

Cite this article:

E Lotfi, H Rezania, B Arghavaninia, M Yarmohammadi Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage 2016 Chin. Phys. B 25 076102

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Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

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