Transport properties in monolayer-bilayer-monolayer graphene planar junctions

doi:10.1088/1674-1056/26/6/067202

Abstract

The transport study of graphene based junctions has become one of the focuses in graphene research. There are two stacking configurations for monolayer-bilayer-monolayer graphene planar junctions. One is the two monolayer graphene contacting the same side of the bilayer graphene, and the other is the two-monolayer graphene contacting the different layers of the bilayer graphene. In this paper, according to the Landauer-Büttiker formula, we study the transport properties of these two configurations. The influences of the local gate potential in each part, the bias potential in bilayer graphene, the disorder and external magnetic field on conductance are obtained. We find the conductances of the two configurations can be manipulated by all of these effects. Especially, one can distinguish the two stacking configurations by introducing the bias potential into the bilayer graphene. The strong disorder and the external magnetic field will make the two stacking configurations indistinguishable in the transport experiment.

Keywords: monolayer graphene bilayer graphene graphene planar junction

Received: 24 February 2017
Revised: 13 April 2017
Accepted manuscript online:

PACS:	72.80.Vp	(Electronic transport in graphene)
	72.25.-b	(Spin polarized transport)
	73.22.Pr	(Electronic structure of graphene)
	81.05.ue	(Graphene)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 11374219), the Jiangsu Provincial Natural Science Foundation, China (Grant No. BK20160007), and the Research Fund for the Doctoral Program of Higher Education of China.

Corresponding Authors: Hua Jiang
E-mail: jianghuaphy@suda.edu.cn

Cite this article:

Kai-Long Chu(储开龙), Zi-Bo Wang(王孜博), Jiao-Jiao Zhou(周娇娇), Hua Jiang(江华) Transport properties in monolayer-bilayer-monolayer graphene planar junctions 2017 Chin. Phys. B 26 067202

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