Influence of Ag and Sn incorporation in In2S3 thin films

doi:10.1088/1674-1056/24/7/078103

Abstract Ag- and Sn-doped In₂S₃ thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, structural, morphological, and optical properties of the In₂S₃ films were investigated. In all deposited samples, the x-ray diffraction spectra revealed the formation of cubic In₂S₃ phase. A significant increase in the crystallite size was observed after Ag doping, while the doping of Sn slightly decreased the crystallite size. The x-ray photoelectron spectroscopy verified the diffusion of Ag and Sn into the In₂S₃ films after annealing. The optical study illustrated that Ag doping resulted in a reduction of the optical band gap while Sn doping led to a widening of the gap. Optical properties were investigated to determine the optical constants. Besides, it was found that the resistivity decreases significantly either after Ag or Sn incorporation. The study demonstrates that the Sn-doped In₂S₃ thin films are more suitable for buffer layer application in solar cells than the Ag-doped In₂S₃ thin films.

Keywords: In₂S₃ thin films doping thermal evaporation

Received: 05 January 2015
Revised: 30 January 2015
Accepted manuscript online:

PACS:	81.05.Hd	(Other semiconductors)
	68.55.-a	(Thin film structure and morphology)
	78.20.Ci	(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076063, 61340051, and 61306120) and the Natural Science Foundation of Fujian Province, China (Grant No. 2014J05073).

Corresponding Authors: Yu Jin-Ling, Cheng Shu-Ying
E-mail: jlyu@semi.ac.cn;sycheng@fzu.du.cn

Cite this article:

Lin Ling-Yan (林灵燕), Yu Jin-Ling (俞金玲), Cheng Shu-Ying (程树英), Lu Pei-Min (陆培民) Influence of Ag and Sn incorporation in In₂S₃ thin films 2015 Chin. Phys. B 24 078103

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Influence of Ag and Sn incorporation in In₂S₃ thin films