New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

doi:10.1088/1674-1056/24/3/037203

Abstract A new SOI power device with multi-region high-concentration fixed charge (MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer (BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.

Keywords: multi-region high-concentration fixed interface charge model of breakdown voltage

Received: 30 July 2014
Revised: 19 October 2014
Accepted manuscript online:

PACS:	72.80.Cw	(Elemental semiconductors)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the State Key Laboratory of Electronic Thin Films and Integrated Devices of China (Grant No. KFJJ201205), the Department of Education Project of Guangxi Province, China (Grant No. 201202ZD041), the Postdoctoral Science Foundation Project of China (Grant Nos. 2012M521127 and 2013T60566), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

Corresponding Authors: Li Hai-Ou
E-mail: lqmoon@guet.edu.cn

Cite this article:

Li Qi (李琦), Li Hai-Ou (李海鸥), Tang Ning (唐宁), Zhai Jiang-Hui (翟江辉), Song Shu-Xiang (宋树祥) New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage 2015 Chin. Phys. B 24 037203

[1]	Duan B X, Zhang B and Li Z J 2007 Chin. Phys. 16 3754
[2]	Duan B X, Zhang B and Li Z J 2007 Chin. Phys. Lett. 24 1342
[3]	Merchant S, Arnold E and Baumgart H 2006 Electron Dev. Lett. 27 377
[4]	Wondrak W and Held R 1998 US Patent: 5767548
[5]	Kumar M J and Sithanandam R 2010 IEEE Trans. Electron Dev. 57 1719
[6]	Sharbati S and Ali Orouji A 2013 Superlatt. Microstruc. 57 77
[7]	Cheng X, Song Z, Dong Y, Yu Y and Shen D 2005 Microelectron Engin. 81 150
[8]	Guo Y F, Li Z J, Zhang B and Fang J 2004 International Conference on Solid-State and Integrated Circuits Technology 1 357
[9]	Cheng J B, Zhang B and Li Z J 2008 IEEE Electron Dev. Lett. 29 645
[10]	Khemka V, Parthasarathy V and Zhu R H 2003 IEEE Electron Dev. Lett. 24 664
[11]	Luo X R, Li Z J and Zhang B 2005 Chin. J. Semicond. 26 2154
[12]	Luo X, Zhang B and Li Z 2007 IEEE Electron Dev. Lett. 28 422
[13]	Wu L J, Hu S D, Zhang B and Li Z J 2011 Chin. Phys. B 20 027101

[1]	Fang-Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures Yao Li(李姚) and Hong-Bin Pu(蒲红斌). Chin. Phys. B, 2021, 30(9): 097201.
[2]	Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园). Chin. Phys. B, 2019, 28(3): 037201.
[3]	Improving breakdown voltage performance of SOI power device with folded drift region Qi Li(李琦), Hai-Ou Li(李海鸥), Ping-Jiang Huang(黄平奖), Gong-Li Xiao(肖功利), Nian-Jiong Yang(杨年炯). Chin. Phys. B, 2016, 25(7): 077201.
[4]	A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide Jiao Huang(黄郊), Li-Wei Guo(郭丽伟), Wei Lu(芦伟), Yong-Hui Zhang(张永晖), Zhe Shi(史哲), Yu-Ping Jia(贾玉萍), Zhi-Lin Li(李治林), Jun-Wei Yang(杨军伟), Hong-Xiang Chen(陈洪祥), Zeng-Xia Mei(梅增霞), Xiao-Long Chen(陈小龙). Chin. Phys. B, 2016, 25(6): 067205.
[5]	A novel thin drift region device with field limiting rings in substrate Li Qi(李琦), Zhu Jin-Luan(朱金鸾),Wang Wei-Dong(王卫东), and Wei Xue-Ming(韦雪明) . Chin. Phys. B, 2011, 20(11): 117202.
[6]	Observation of a diverse deviation from macropore-formation theory in silicon electrochemistry Bao Xiao-Qing(包晓清), Ge Dao-Han(葛道晗), and Jiao Ji-Wei(焦继伟). Chin. Phys. B, 2008, 17(8): 3130-3137.
[7]	A novel type of ultra fast and ultra soft recovery SiGe/Si heterojunction power diode with an ideal ohmic contact Ma Li (马丽), Gao Yong (高勇), Wang Cai-Lin (王彩琳). Chin. Phys. B, 2004, 13(7): 1114-1119.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

Cite this article:

Online attention