Power-induced polarization switching and bistability characteristics in 1550-nm VCSELs subjected to orthogonal optical injection

doi:10.1088/1674-1056/24/2/024210

Abstract The polarization switching (PS) and polarization bistability (PB) characteristics of a 1550-nm vertical-cavity surface-emitting laser (VCSEL) subjected to orthogonal optical injection are systematically investigated. The simulated results show that the PS and polarization-resolved nonlinear dynamical states of the VCSEL are critically dependent on the changing paths of the injected power. The polarization dynamics for different scanning directions of the injected power is presented to explain the polarization evolution during the formation of PS. In the case of forward scanning injected power, with the increase of frequency detuning level between the VCSEL and the injected light, the injected power required for PS gradually increases for negative frequency detuning but exhibits fluctuations for positive frequency detuning. In the case of reversely scanning injected power, the injected power required for PS displays fluctuant changes within the whole frequency detuning range. Specifically, PS may disappear under certain negative frequency detuning and large bias current. Furthermore, the hysteresis width as a function of the frequency detuning is calculated, and the regions for the appearance and disappearance of PB have been determined in the parameter space of the bias current and frequency detuning.

Keywords: 1550-nm vertical-cavity surface-emitting lasers orthogonal optical injection polarization switching polarization bistability

Received: 29 May 2014
Revised: 11 July 2014
Accepted manuscript online:

PACS:	42.55.Px	(Semiconductor lasers; laser diodes)
	42.65.Pc	(Optical bistability, multistability, and switching, including local field effects)
	42.65.Sf	(Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61178011, 61275116, and 61475127) and the Natural Science Foundation of Chongqing City, China (Grant No. 2012jjB40011).

Corresponding Authors: Wu Zheng-Mao
E-mail: zmwu@swu.edu.cn

Cite this article:

Chen Jian-Jun (陈建军), Xia Guang-Qiong (夏光琼), Wu Zheng-Mao (吴正茂) Power-induced polarization switching and bistability characteristics in 1550-nm VCSELs subjected to orthogonal optical injection 2015 Chin. Phys. B 24 024210

[1]	Argyris A, Syvridis D, Larger L, Annovazzi-Lodi V, Colet P, Fisher I, Garcia-Ojalvo J, Mirassl C R, Pesquera L and Shore K A 2005 Nature 438 343
[2]	Zhang J Z, Wang Y C and Wang A B 2008 Chin. Phys. B 17 3264
[3]	Uchida A, Amano K, Inoue M, Hirano K, Naito S, Someya H, Oowada I, Kurashige T, Shiki M, Yoshimori S, Yoshimura K and Davis P 2008 Nat. Photon. 2 728
[4]	Lin F Y and Liu J M 2004 IEEE J. Sel. Top. Quantum Electron. 10 991
[5]	Chan S C and Liu J M 2004 IEEE J. Sel. Top. Quantum Electron. 10 1025
[6]	Liu L, Zheng J Y, Zhang M J, Meng L N, Zhang Z X and Wang Y C 2012 Acta Phys. Sin. 61 084204 (in Chinese)
[7]	Yan S L 2013 Acta Phys. Sin. 62 230504 (in Chinese)
[8]	Iga K 2000 IEEE J. Sel. Top. Quantum Electron. 6 1201
[9]	Koyama F 2006 J. Lightwave Technol. 24 4502
[10]	Miguel M S, Feng Q and Moloney J V 1995 Phys. Rev. A 52 1728
[11]	Martin-Regalado J, Prati F, Miguel M S and Abraham N B 1997 IEEE J. Quantum Electron. 33 765
[12]	Matsui Y, Vakhshoori D, Wang P, Chen P, Lu C C, Jiang M, Knopp K, Burroughs S and Tayebati P 2003 IEEE J. Quantum Electron. 39 1037
[13]	Zhong D Z, Deng T and Zheng G L 2014 Acta Phys. Sin. 63 070504 (in Chinese)
[14]	Wang X F and Li J 2014 Acta Phys. Sin. 63 014203 (in Chinese)
[15]	Hong Y H 2013 Opt. Express 21 17894
[16]	Liao J F and Sun J Q 2013 Opt. Commun. 295 188
[17]	Deng T, Xia G Q and Wu Z M 2014 Nonlinear Dyn. 76 399
[18]	Xiang S Y, Pan W, Luo B, Yan L S, Zou X H and Li N Q 2013 IEEE J. Sel. Top. Quantum Electron. 19 1700108
[19]	Xie Y Y, Wu Z M, Deng T, Tang X, Fan L and Xia G Q 2013 IEEE Photon. Technol. Lett. 25 1605
[20]	Panajotov K, Gatare I, Valle A, Thienpont H and Sciamanna M 2009 IEEE J. Quantum Electron. 45 1473
[21]	Liu J, Wu Z M and Xia G Q 2009 Opt. Express 17 12619
[22]	Guo P, Yang W J, Parekh D, Chang-Hasnain J C, Xu A and Chen Z Y 2013 Opt. Express 21 3125
[23]	Al-Seyab R, Schires K, Khan N A, Hurtado A, Henning I D and Adams M J 2011 IEEE J. Sel. Top. Quantum Electron. 17 1242
[24]	Valle A, Gatare I, Panajotov K and Sciamanna M 2007 IEEE J. Quantum Electron. 43 322
[25]	Deng T, Wu Z M, Xie Y Y, Wu J G, Tang X, Fan L, Panajotov K and Xia G Q 2013 Appl. Opt. 52 3833
[26]	Salvide M F, Masoller C and Torre M S 2013 IEEE J. Quantum Electron. 49 886
[27]	Mori T, Sato Y and Kawaguchi H 2008 J. Lightwave Technol. 26 2946
[28]	Sakaguchi J, Katayama T and Kawaguchi H 2010 Opt. Express 18 12362
[29]	Katayama T, Ooi T and Kawaguchi H 2009 IEEE J. Quantum Electron. 45 1495
[30]	Quirce A, Cuesta J R, Hurtado A, Schires K, Valle A, Pesquera L, Henning I D and Adams M J 2012 IEEE J. Quantum Electron. 48 588
[31]	Perez P, Valle A, Pesquera L and Quirce A 2013 IEEE J. Sel. Top. Quantum Electron. 19 1700408
[32]	Yu S F 1997 J. Lightwave Technol. 15 1032
[33]	Ryvkin B S, Panajotov K, Avrutin E A, Veretennicoff I and Thienpont H 2004 J. Appl. Phys. 96 6002
[34]	Sciamanna M and Panajotov K 2006 Phys. Rev. A 73 023811
[35]	Zhang W L, Pan W, Luo B, Wang M Y and Zou X H 2008 IEEE J. Sel. Top. Quantum Electron. 14 889
[36]	Gatare I, Sciamanna M, Nizette M, Thienpont H and Panajotov K 2009 Phys. Rev. E 80 026218
[37]	Valle A, Molina M G and Pesquera L 2008 IEEE J. Sel. Top. Quantum Electron. 14 895
[38]	Quirce A, Valle A and Pesquera L 2009 IEEE Photon. Technol. Lett. 21 1193
[39]	Torre M S, Quirce A, Valle A and Pesquera L 2010 J. Opt. Soc. Am. B 27 2542
[40]	Hurtado A, Quirce A, Valle A, Pesquera L and Adams M J 2009 Opt. Express 17 23637
[41]	Torre M S, Hurtado A, Quirce A, Valle A, Pesquera L and Adams M J 2011 IEEE J. Quantum Electron. 47 92
[42]	Kapon E and Sirbu A 2009 Nat. Photon. 3 27

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Power-induced polarization switching and bistability characteristics in 1550-nm VCSELs subjected to orthogonal optical injection

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