Non-homogeneous SiGe-on-insulator formed by germanium condensation process

doi:10.1088/1674-1056/23/4/048109

Abstract Ge condensation process of a sandwiched structure of Si/SiGe/Si on silicon-on-insulator (SOI) to form SiGe-on-insulator (SGOI) substrate is investigated. The non-homogeneity of SiGe on insulator is observed after a long time oxidation and annealing due to an increased consumption of silicon at the inflection points of the corrugated SiGe film morphology, which happens in the case of the rough surface morphology, with lateral Si atoms diffusing to the inflection points of the corrugated SiGe film. The transmission electron microscopy measurements show that the non-homogeneous SiGe layer exhibits a single crystalline nature with perfect atom lattice. Possible formation mechanism of the non-homogeneity SiGe layer is presented by discussing the highly nonuniform oxidation rate that is spatially dependent in the Ge condensation process. The results are of guiding significance for fabricating the SGOI by Ge condensation process.

Keywords: SGOI Ge condensation non-homogeneity

Received: 14 July 2013
Revised: 24 October 2013
Accepted manuscript online:

PACS:	81.65.Mq	(Oxidation)
	71.55.Cn	(Elemental semiconductors)
	81.30.Bx	(Phase diagrams of metals, alloys, and oxides)

Fund: Project supported by the National Key Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61176092, 61036003, and 60837001), the Ph. D. Programs Foundation of Ministry of Education of China (Grant No. 20110121110025), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2010121056).

Corresponding Authors: Li Cheng
E-mail: lich@xmu.edu.cn

About author: 81.65.Mq; 71.55.Cn; 81.30.Bx

Cite this article:

Huang Shi-Hao (黄诗浩), Li Cheng (李成), Lu Wei-Fang (卢卫芳), Wang Chen (王尘), Lin Guang-Yang (林光杨), Lai Hong-Kai (赖虹凯), Chen Song-Yan (陈松岩) Non-homogeneous SiGe-on-insulator formed by germanium condensation process 2014 Chin. Phys. B 23 048109

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Non-homogeneous SiGe-on-insulator formed by germanium condensation process

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