Valence band variation in Si (110) nanowire induced by a covered insulator

doi:10.1088/1674-1056/19/1/014601

Abstract In this work, we investigate strain effects induced by the deposition of gate dielectrics on the valence band structures in Si (110) nanowire via the simulation of strain distribution and the calculation of a generalized 6 × 6k $\cdot$ p strained valence band. The nanowire is surrounded by the gate dielectric. Our simulation indicates that the strain of the amorphous SiO₂ insulator is negligible without considering temperature factors. On the other hand, the thermal residual strain in a nanowire with amorphous SiO₂ insulator which has negligible lattice misfit strain pushes the valence subbands upwards by chemical vapour deposition and downwards by thermal oxidation treatment. In contrast with the strain of the amorphous SiO₂ insulator, the strain of the HfO₂ gate insulator in Si (110) nanowire pushes the valence subbands upwards remarkably. The thermal residual strain by HfO₂ insulator contributes to the up-shifting tendency. Our simulation results for valence band shifting and warping in Si nanowires can provide useful guidance for further nanowire device design.

Keywords: silicon nanowire valence band thermal residual strain

Received: 04 May 2009
Revised: 30 June 2009
Accepted manuscript online:

PACS:	73.22.-f	(Electronic structure of nanoscale materials and related systems)
	62.25.-g	(Mechanical properties of nanoscale systems)
	71.15.-m	(Methods of electronic structure calculations)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.65.Mq	(Oxidation)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2006CB302705) and the Foundation for Key Program of Ministry of Education, China (Grant No. 107003).

Cite this article:

Xu Hong-Hua(许洪华), Liu Xiao-Yan(刘晓彦), He Yu-Hui(何毓辉), Fan Chun(樊春), Du Gang(杜刚), Sun Ai-Dong(孙爱东), Han Ru-Qi(韩汝琦), and Kang Jin-Feng(康晋锋) Valence band variation in Si (110) nanowire induced by a covered insulator 2010 Chin. Phys. B 19 014601

[1]	Cui Y, Wei Q Q, Park H K and Lieber C M 2001 Science 293 1289
[2]	Gudiksen M S, Lauhon L J, Wang J, Smith D C and Lieber C M 2002 Nature 415 617
[3]	Cui Y and Lieber C M 2001 Science 291 851
[4]	Zhang L D, Meng G W and Phillipp F 2001 Chin. Phys. 10 117
[5]	Ungersboeck E, Dhar S, Karlowatz G, Sverdlov V, Kosina H and Selberherr S 2007 IEEE Trans. Electron. Device. Lett. 54 2183
[6]	Khakifirooz A and Antoniadis D A 2006 IEEE Trans. Electron. Device. Lett. 27 402
[7]	Sajjad R N and Alam K 2009 J. Appl. Phys. 105 044307
[8]	Welser J, Hoyt J L and Gibbons J F 1992 IEEE Technical Digest-International Electron Devices Meeting (New York) p1000
[9]	Shimizu A, Hachimine K, Ohki N, Ohta H, Koguchi M, Nonaka Y, Sato H and Ootsuka F 2001 IEEE Technical Digest-International Electron Devices Meeting (New York) p433
[10]	Sinha A K, Levinstein H J and Smith T E 1978 J. Appl. Phys. 49 2423
[11]	Carlotti G, Doucet L and Dupeux M 1997 Thin Solid Films 296 102
[12]	Jansen F, Machonkin M A, Palmieri N and Kuhman D 1987 J. Appl. Phys. 62 4732
[13]	Lin G J, Lai H K, Li C, Chen S Y and Yu J Z 2008 Chin. Phys. B 17 3479
[14]	He Y H, Zhao Y N, Yu S M, Fan C, Du G, Kang J F, Han R Q and Liu X Y 2008 IEEE Technical Digest-International Electron Devices Meeting p189--192
[15]	He Y H, Fan C, Zhao Y N, Du G, Kang J F, Liu X Y and Han R Q 2008 Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD 2008) p121
[16]	Okada Y and Tokumaru Y 1984 J. Appl. Phys. 56 314
[17]	Slack G A and Bartram S F 1974 J. Appl. Phys. 46 89
[18]	Xu H H, He Y H, Fan C, Zhao Y N, Du G, Kang J F, Han R Q and Liu X Y 2009 Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD 2009) San Diego, California, USA September 9--11, 2009 pp.~245—248

[1]	Band alignment of p-type oxide/ε-Ga₂O₃ heterojunctions investigated by x-ray photoelectron spectroscopy Chang Rao(饶畅), Zeyuan Fei(费泽元), Weiqu Chen(陈伟驱), Zimin Chen(陈梓敏), Xing Lu(卢星), Gang Wang(王钢), Xinzhong Wang(王新中), Jun Liang(梁军), Yanli Pei(裴艳丽). Chin. Phys. B, 2020, 29(9): 097303.
[2]	Ultra-low thermal conductivity of roughened silicon nanowires: Role of phonon-surface bond order imperfection scattering Heng-Yu Yang(杨恒玉), Ya-Li Chen(陈亚利), Wu-Xing Zhou(周五星), Guo-Feng Xie(谢国锋), Ning Xu(徐宁). Chin. Phys. B, 2020, 29(8): 086502.
[3]	Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor Ya-Mei Dou(窦亚梅), Wei-Hua Han(韩伟华), Yang-Yan Guo(郭仰岩), Xiao-Song Zhao(赵晓松), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华). Chin. Phys. B, 2019, 28(6): 066804.
[4]	Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor Xiao-Di Zhang(张晓迪), Wei-Hua Han(韩伟华), Wen Liu(刘雯), Xiao-Song Zhao(赵晓松), Yang-Yan Guo(郭仰岩), Chong Yang(杨冲), Jun-Dong Chen(陈俊东), Fu-Hua Yang(杨富华). Chin. Phys. B, 2019, 28(12): 127302.
[5]	Surface effects on the thermal conductivity of silicon nanowires Hai-Peng Li(李海鹏), Rui-Qin Zhang(张瑞勤). Chin. Phys. B, 2018, 27(3): 036801.
[6]	Silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection Tijjani Adam, U. HAshim, Th S. Dhahi. Chin. Phys. B, 2015, 24(6): 068102.
[7]	Vacancy effect on the doping of silicon nanowires：A first-principles study Liu Yang (刘阳), Liang Pei (梁培), Shu Hai-Bo (舒海波), Cao Dan (曹丹), Dong Qian-Min (董前民), Wang Le (王乐). Chin. Phys. B, 2014, 23(6): 067304.
[8]	A k·p analytical model for valence band of biaxial strained Ge on (001) Si_1-xGe_x Wang Guan-Yu(王冠宇), Zhang He-Ming(张鹤鸣), Gao Xiang(高翔), Wang Bin(王斌), and Zhou ChunYu(周春宇) . Chin. Phys. B, 2012, 21(5): 057103.
[9]	Energy band alignment of PbTe/CdTe(111) interface determined by ultraviolet photoelectron spectra using synchrotron radiation Cai Chun-Feng(蔡春锋), Wu Hui-Zhen(吴惠桢), Si Jian-Xiao(斯剑霄), Jin Shu-Qiang(金树强), Zhang Wen-Hua(张文华), Xu Yang(许杨), and Zhu Jun-Fa(朱骏发). Chin. Phys. B, 2010, 19(7): 077301.
[10]	Thermal stability of silicon nanowires: atomistic simulation study Liu Wen-Liang(刘文亮), Zhang Kai-Wang(张凯旺), and Zhong Jian-Xin(钟建新). Chin. Phys. B, 2009, 18(7): 2920-2924.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Valence band variation in Si (110) nanowire induced by a covered insulator

Cite this article:

Online attention