Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator
Li Bing-Sheng(李炳生)a)†, Zhang Chong-Hong(张崇宏)a), Hao Xiao-Peng(郝小鹏)b), Wang Dan-Ni(王丹妮)b), Zhou Li-Hong(周丽宏)a), Zhang Hong-Hua(张洪华)a), Yang Yi-Tao(杨义涛)a), and Zhang Li-Qing(张丽卿)a)
aInstitute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; bInstitute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China
Abstract In the present work, a Cz--Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of $2\times 10^{16}$ cm$^{ - 2}$ and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.
Received: 30 January 2008
Revised: 04 March 2008
Accepted manuscript online:
Li Bing-Sheng(李炳生), Zhang Chong-Hong(张崇宏), Hao Xiao-Peng(郝小鹏), Wang Dan-Ni(王丹妮), Zhou Li-Hong(周丽宏), Zhang Hong-Hua(张洪华), Yang Yi-Tao(杨义涛), and Zhang Li-Qing(张丽卿) Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator 2008 Chin. Phys. B 17 3836
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