Please wait a minute...
Chin. Phys. B, 2014, Vol. 23(3): 037305    DOI: 10.1088/1674-1056/23/3/037305

High-efficiency S-band harmonic tuning GaN amplifier

Cao Meng-Yi (曹梦逸)a, Zhang Kai (张凯)a, Chen Yong-He (陈永和)a, Zhang Jin-Cheng (张进成)a, Ma Xiao-Hua (马晓华)a b, Hao Yue (郝跃)a
a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
b School of Technical Physics, Xidian University, Xi’an 710071, China
Abstract  In this paper, we present a high-efficiency S-band gallium nitride (GaN) power amplifier (PA). This amplifier is fabricated based on a self-developed GaN high-electron-mobility transistor (HEMT) with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2nd harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm (~ 70 W) with a power-added efficiency (PAE) of 72.2% at 2 GHz in pulse condition. When operating at 1.8–2.2 GHz (20% relative bandwidth), the amplifier provides an output power higher than 48 dBm (~ 65 W), with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave (CW) operating conditions, the amplifier gives an output power over 46 dBm (40 W) with PAE beyond 60% over the whole operation frequency range.
Keywords:  power amplifier      GaN high-electron-mobility transistor (HEMT)      high efficiency      harmonic manipulation  
Received:  03 June 2013      Revised:  14 August 2013      Accepted manuscript online: 
PACS:  73.61.Ey (III-V semiconductors)  
  84.30.Bv (Circuit theory)  
  84.30.Le (Amplifiers)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61203211), the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No. 13KJB140006), and the Foundation for Outstanding Young Teachers of Nanjing University of Information Science & Technology, China (Grant No. 20110423).
Corresponding Authors:  Ma Xiao-Hua     E-mail:

Cite this article: 

Cao Meng-Yi (曹梦逸), Zhang Kai (张凯), Chen Yong-He (陈永和), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) High-efficiency S-band harmonic tuning GaN amplifier 2014 Chin. Phys. B 23 037305

[1] Bumjin K, Derickson D and Sun C 2007 Proceedings of the Asia-Pacific Microwave Conference, December 11–14, 2007, Bangkok, Thailand, p. 1
[2] Trew R J, Bilbro G L, Kuang W, Liu Y and Yin H 2005 Microwave Magazine 6 56
[3] Mishra U K, Parikh P and Wu Y F 2002 Proceeding of the IEEE 90 1022
[4] Xie G, Xu E, Lee J, Hashemi N, Zhang B, Fu F Y and Ng W T 2012 IEEE Electron Dev. Lett. 33 670
[5] Xie G, Edward X, Niloufar H, Zhang B, Fred Y F and Wai T N 2012 Chin. Phys. B 21 086105
[6] Gil W C, Hyoung J K, Woong J H, Suk W S, Jin J C and Sung J H 2009 Microwave Symposium Digest IEEE MTT-S International, June 7–12, 2009, Boston, MA, p. 925
[7] Cheron J, Campovecchio M, Barataud D, Reveyrand T, Mons S, Stanislawiak M, Eudeline P and Floriot D 2012 Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), September 3–4, 2012, Dublin, Ireland, p. 1
[8] Colantonio P, Giannini F, Giofre R, Limiti E, Serino A, Peroni M, Romanini P and Proietti C 2006 IEEE Transactions on Microwave Theory and Techniques 54 2713
[9] Maeda M, Masato H, Takehara H, Nakamura M, Morimoto S, Fujimoto H, Ota Y and Ishikawa O 1995 IEEE Transactions on Microwave Theory and Techniques 43 2952
[10] Raab F H 1997 IEEE Transactions on Microwave Theory and Techniques 45 2007
[11] Chen C, Hao Y, Feng H, Yang L A, Ma X H, Duan H T and Hu S G 2009 J. Semiconductors 30 57
[12] Yang L, Hu G Z, Hao Y, Ma X H, Quan S, Yang L Y and Jiang S G 2010 Chin. Phys. B 19 047301
[13] Otsuka H, Yamanaka K, Noto H, Tsuyama Y, Chaki S, Inoue A and Miyazaki M 2008 Microwave Symposium Digest, 2008 IEEE MTT-S International, June 15–20, 2008, Atlanta, America, p. 311
[1] Large aperture phase-coded diffractive lens for achromatic and 16° field-of-view imaging with high efficiency
Gu Ma(马顾), Peng-Lei Zheng(郑鹏磊), Zheng-Wen Hu(胡正文), Suo-Dong Ma(马锁冬), Feng Xu(许峰), Dong-Lin Pu(浦东林), and Qin-Hua Wang(王钦华). Chin. Phys. B, 2022, 31(7): 074210.
[2] Numerical analysis of a dual-pass pumping laser with weak absorption
Guang-Ju Zhang(张光举), Ma-Li Gong(巩马理), Wen-Qi Zhang(张文启). Chin. Phys. B, 2017, 26(5): 050203.
[3] High efficiency terahertz diffraction grating with trapezoidal elements
Yin-Zhong Wu(巫殷忠), Quan-Pin Fan(范全平), Qiang-Qiang Zhang(张强强), Lai Wei(魏来), Yong Chen(陈勇), Zu-Hua Yang(杨祖华), Lei-Feng Cao(曹磊峰). Chin. Phys. B, 2017, 26(12): 124203.
[4] Low-repetition-rate, all-polarization-maintaining Yb-doped fiber laser mode-locked by a semiconductor saturable absorber
Xiao-Sheng Xiao(肖晓晟). Chin. Phys. B, 2017, 26(11): 114204.
[5] X-band inverse class-F GaN internally-matched power amplifier
Bo-Chao Zhao(赵博超), Yang Lu(卢阳), Wen-Zhe Han(韩文哲), Jia-Xin Zheng(郑佳欣), Heng-Shuang Zhang(张恒爽), Pei-jun Ma(马佩军), Xiao-Hua Ma(马晓华), Yue Hao(郝跃). Chin. Phys. B, 2016, 25(9): 097306.
[6] Device simulation of lead-free CH3NH3SnI3 perovskite solar cells with high efficiency
Hui-Jing Du(杜会静), Wei-Chao Wang(王韦超), Jian-Zhuo Zhu(朱键卓). Chin. Phys. B, 2016, 25(10): 108802.
[7] Analysis of the third harmonic for class-F power amplifiers with an I–V knee effect
Zhao Bo-Chao (赵博超), Lu Yang (卢阳), Wei Jia-Xing (魏家行), Dong Liang (董梁), Wang Yi (王毅), Cao Meng-Yi (曹梦逸), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2015, 24(5): 058401.
[8] Pure blue and white light electroluminescence in a multilayer organic light-emitting diode using a new blue emitter
Wei Na (魏娜), Guo Kun-Ping (郭坤平), Zhou Peng-Chao (周朋超), Yu Jian-Ning (于建宁), Wei Bin (魏斌), Zhang Jian-Hua (张建华). Chin. Phys. B, 2014, 23(7): 077802.
[9] Theory of noise in a kilo-Hz cascaded high-energy Yb-doped nanosecond pulsed fiber amplifier
Liu Ming (刘明), Zhang Hai-Tao (张海涛), Gong Ma-Li (巩马理), Zhao Yue-Jin (赵跃进), Cheng Wen-Yong (程文雍), Meng Kuo (孟阔), Zheng Chao (郑超), Chen Yi-Zhu (陈倚竹). Chin. Phys. B, 2014, 23(4): 044214.
[10] Study on a W-band modified V-shaped microstrip meander-line traveling-wave tube
Shen Fei(沈飞), Wei Yan-Yu(魏彦玉), Xu Xiong(许雄), Yin Hai-Rong(殷海荣), Gong Yu-Bin(宫玉彬), and Wang Wen-Xiang(王文祥) . Chin. Phys. B, 2012, 21(6): 064210.
[11] Efficient top-emitting white organic light emitting device with an extremely stable chromaticity and viewing-angle
Shao Ming (邵茗), Guo Xu (郭旭), Chen Shu-Fen (陈淑芬), Fan Qu-Li (范曲立), Huang Wei (黄维). Chin. Phys. B, 2012, 21(10): 108507.
[12] High power high beam quality diode-pumped 1319-nm Nd:YAG oscillator-amplifier laser system
Xie Shi-Yong(谢仕永), Lu Yuan-Fu(鲁远甫), Ma Qing-Lei(马庆磊),Wang Peng-Yuan(王鹏远),Shen Yu(申玉), Zong Nan(宗楠),Yang Feng(杨峰),Bo Yong(薄勇), Peng Qin-Jun(彭钦军),Cui Da-Fu(崔大复), and Xu Zu-Yan(许祖彦). Chin. Phys. B, 2010, 19(6): 064208.
[13] Incoherent and coherent beam combination for master oscillator/power amplifier system with stimulated Brillouin scattering mirror
Fu Shi-You(付石友), Tian Zhao-Shuo(田兆硕), Shi Xiao-Li(史小利), and Sun Zheng-He(孙正和). Chin. Phys. B, 2008, 17(2): 628-632.
[14] 26W near diffraction limited Q-switched green laser based on a diode-end-pumped master oscillator power amplifier
Zhang Ying (张瑛), Hou Wei (侯玮), Yao Ai-Yun (姚爱云), Yang Xiao-Dong (杨晓东), Li Rui-Ning (李瑞宁), Cui Da-Fu (崔大复), Xu Zu-Yan (许祖彦). Chin. Phys. B, 2004, 13(11): 1877-1880.
No Suggested Reading articles found!