High-efficiency S-band harmonic tuning GaN amplifier

doi:10.1088/1674-1056/23/3/037305

Abstract In this paper, we present a high-efficiency S-band gallium nitride (GaN) power amplifier (PA). This amplifier is fabricated based on a self-developed GaN high-electron-mobility transistor (HEMT) with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2nd harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm (～ 70 W) with a power-added efficiency (PAE) of 72.2% at 2 GHz in pulse condition. When operating at 1.8–2.2 GHz (20% relative bandwidth), the amplifier provides an output power higher than 48 dBm (～ 65 W), with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave (CW) operating conditions, the amplifier gives an output power over 46 dBm (40 W) with PAE beyond 60% over the whole operation frequency range.

Keywords: power amplifier GaN high-electron-mobility transistor (HEMT) high efficiency harmonic manipulation

Received: 03 June 2013
Revised: 14 August 2013
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	84.30.Bv	(Circuit theory)
	84.30.Le	(Amplifiers)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61203211), the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No. 13KJB140006), and the Foundation for Outstanding Young Teachers of Nanjing University of Information Science & Technology, China (Grant No. 20110423).

Corresponding Authors: Ma Xiao-Hua
E-mail: xhma@xidian.edu.cn

Cite this article:

Cao Meng-Yi (曹梦逸), Zhang Kai (张凯), Chen Yong-He (陈永和), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) High-efficiency S-band harmonic tuning GaN amplifier 2014 Chin. Phys. B 23 037305

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