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Chin. Phys. B, 2013, Vol. 22(5): 057306    DOI: 10.1088/1674-1056/22/5/057306

Temperature-controllable spin-polarized current and spin polarization in a Rashba three-terminal double-quantum-dot device

Hong Xue-Kun (洪学鹍), Yang Xi-Feng (杨希峰), Feng Jin-Fu (冯金福), Liu Yu-Shen (刘玉申)
Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500, China
Abstract  We propose a Rashba three-terminal double-quantum-dot device to generate a spin-polarized current and manipulate the electron spin in each quantum dot by utilizing the temperature gradient instead of the electric bias voltage. This device possesses a nonresonant tunneling channel and two resonant tunneling channels. The Keldysh nonequilibrium Green's function techniques are employed to determinate the spin-polarized current flowing from the electrodes and the spin accumulation in each quantum dot. We find that their signs and magnitudes are well controllable by the gate voltage or the temperature gradient. This result is attribute to the change in the slope of the transmission probability at the Fermi levels in the low-temperature region. Importantly, an obviously pure spin current can be injected into or extracted from one of the three electrodes by properly choosing the temperature gradient and the gate voltages. Therefore, the device can be used as an ideal thermal generator to produce a pure spin current and manipulate the electron spin in the quantum dot.
Keywords:  Rashba quantum dot      spin polarization      spin accumulation      temperature gradient  
Received:  17 October 2012      Revised:  26 November 2012      Accepted manuscript online: 
PACS:  73.63.Kv (Quantum dots)  
  71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)  
  72.20.Pa (Thermoelectric and thermomagnetic effects)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11247028, 11147162, and 61106126) and the Open Fund of Jiangsu Laboratory of Advanced Functional Materials, China (Grant No. 12KFJJ001).
Corresponding Authors:  Liu Yu-Shen     E-mail:

Cite this article: 

Hong Xue-Kun (洪学鹍), Yang Xi-Feng (杨希峰), Feng Jin-Fu (冯金福), Liu Yu-Shen (刘玉申) Temperature-controllable spin-polarized current and spin polarization in a Rashba three-terminal double-quantum-dot device 2013 Chin. Phys. B 22 057306

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