Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes

doi:10.1088/1674-1056/22/10/106107

Abstract A novel structure of AlGaN/GaN Schottky barrier diode (SBD) featuring electric field optimization techniques of anode-connected-field-plate (AFP) and magnesium-doped p-type buried layer under the two-dimensional electron gas (2DEG) channel is proposed. In comparison with conventional AlGaN/GaN SBDs, the magnesium-doped p-type buried layer in the proposed structure can provide holes that can help to deplete the surface 2DEG. As a result, surface field strength around the electrode edges is significantly suppressed and the electric field along the channel is distributed more evenly. Through 2D numerical analysis, the AFP parameters (field plate length, L_AFP, and field plate height, T_AFP) and p-type buried layer parameters (p-type layer concentration, N_P, and p-type layer thickness, T_P) are optimized to achieve a three-equal-peak surface channel field distribution under exact charge balance conditions. A novel structure with a total drift region length of 10.5 μm and a magnesium-doped p-type concentration of 1×10¹⁷ cm^-3 achieves a high breakdown voltage (V_B) of 1.8 kV, showing 5 times improvement compared with the conventional SBD with the same device dimension.

Keywords: gallium nitride high voltage SBD field plate magnesium buried layer

Received: 27 February 2013
Revised: 09 April 2013
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	71.20.N
	51.50.+v	(Electrical properties)

Fund: Project supported by the Science Foundation of the Ministry of Education of China (Grant No. 20100101110056) and the Natural Science Foundation of Zhejiang Province of China for Distinguished Young Scholars (Grant No. R1100468).

Corresponding Authors: Xie Gang
E-mail: xielyz@zju.edu.cn

Cite this article:

Tang Cen (汤岑), Xie Gang (谢刚), Zhang Li (张丽), Guo Qing (郭清), Wang Tao (汪涛), Sheng Kuang (盛况) Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes 2013 Chin. Phys. B 22 106107

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Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes

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