Temperature dependences of optical properties, chemical composition, structure, and laser damage in Ta2O5 films

doi:10.1088/1674-1056/21/11/114213

Abstract Ta₂O₅ films are prepared by e-beam evaporation with varied deposition temperatures, annealing temperatures, and annealing time. The effects of temperature on the optical properties, chemical composition, structure, and laser-induced damage threshold (LIDT) are systematically investigated. The results show that the increase of deposition temperature decreases the film transmittance slightly, yet annealing below 923 K is beneficial for the transmittance. The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in the hexagonal phase when annealed at 1073 K. While an interesting near-crystalline phase is found when annealed at 923 K. The LIDT increases with the deposition temperature increasing, whereas it increases firstly and then decreases as the annealing temperature increases. In addition, the increase of annealing time from 4 h to 12 h is favorable to improving the LIDT, which is mainly due the improvement of the O/Ta ratio. The highest LIDT film is obtained when annealed at 923 K, owing to the lowest density of defect.

Keywords: Ta₂O₅ film laser damage deposition annealing

Received: 14 May 2012
Revised: 29 May 2012
Accepted manuscript online:

PACS:	42.79.-e	(Optical elements, devices, and systems)
	68.60.-p	(Physical properties of thin films, nonelectronic)
	81.15.Dj	(E-beam and hot filament evaporation deposition)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61107080 and 50921002), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2011223), the Specialized Research Fund for the Doctoral Program of Higher Education of China (New Teachers) (Grant No. 20110095120018), the China Postdoctoral Science Foundation (Grant No. 20110491472), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2012QNA03).

Corresponding Authors: Qiang Ying-Huai
E-mail: yhqiang@cumt.edu.cn

Cite this article:

Xu Cheng (许程), Yang Shuai (杨帅), Zhang Sheng-Hui (张生辉), Niu Ji-Nan (牛继南), Qiang Ying-Huai (强颖怀), Liu Jiong-Tian (刘炯天), Li Da-Wei (李大伟 ) Temperature dependences of optical properties, chemical composition, structure, and laser damage in Ta₂O₅ films 2012 Chin. Phys. B 21 114213

[1]	Liu Z, Chen S, Ma P, Wei Y, Zheng Y, Pan F, Liu H and Tang G 2012 Opt. Express 20 854
[2]	Xia Z, Zhao Y, Huang C, Xue Y and Guo P 2009 Opt. Commun. 282 970
[3]	Xu C, Xiao Q, Ma J, Jin Y, Shao J and Fan Z 2008 Appl. Surf. Sci. 254 6554
[4]	Yu H, Qi H, Cui Y, Shen Y, Shao J and Fan Z 2007 Appl. Surf. Sci. 253 6113
[5]	Han W, Wang F, Zhou L, Feng B, Jia H, Li K, Xiang Y and Zheng W 2012 Chin. Phys. B 21 077901
[6]	Jiang Y, Xiang X, Liu C, Luo C, Wang H, Yuan X, He S, Ren W, Lv H, Zheng W and Zu X 2012 Chin. Phys. B 21 064219
[7]	Jagadeesh Chandra S V, Uthanna S and Mohan Rao G 2008 Appl. Sur. Sci. 254 1953
[8]	Kukli K, Rital M, Matero R and Leskelä M 2000 J. Cryst. Growth 212 459
[9]	Wolfe C R, Kozlowski M R, Campbell J H, Rainer F, Morgan A J and Gonzales R P 1989 Proc. SPIE 509 255
[10]	Hu H, Fan Z and Luo F 2001 Appl. Opt. 40 1950
[11]	ISO 11254-1:2000: Lasers and Laser-related Equipment-Determination of Laser-induced Damage Threshold of Optical Surfaces. Part 1. 1-on-1 test
[12]	Boulouz M, Boulouz A, Giani A and Boyer A 1998 Thin Solid Films 323 85
[13]	Yu H, Shen Y, Cui Y, Qi H, Shao J and Fan Z 2008 Appl. Surf. Sci. 254 1783
[14]	Macleod H A 1986 J. Vac. Sci. Technol. A 4 418
[15]	Atanassova E, Spassov D, Paskaleva A, Koprinarova J and Georgieva M 2002 Microelectron. J. 33 907
[16]	Payne M C, Teter M P, Allan D C, Arias T A and Joannopoulos J D 1992 Rev. Mod. Phys. 64 1045
[17]	Fleming R M, Lang D V, Jones C D W, Steigerwald M L, Murphy D W, Alers G B, Wong Y H, van Dover R B, Kwo J R and Sergent A M 2000 J. Appl. Phys. 88 850
[18]	Sainz-Diaz C I, Hernandez-Laguna A and Dove M T 2001 Phys. Chem. Minerals 28 130
[19]	Zhao Y, Gao W, Shao J and Fan Z 2004 Appl. Surf. Sci. 227 275
[20]	Xu C, Ma J, Jin Y, He H, Shao J and Fan Z 2008 Chin. Phys. Lett. 25 1321
[21]	Xu C, Qiang Y, Zhu Y, Shao J, Fan Z and Han J 2010 Opt. Laser Technol. 42 497
[22]	Yuan L, Zhao Y, Shang G, Wang C, He H, Shao J and Fan Z 2007 J. Opt. Soc. Am. B 24 538
[23]	Sawada H and Kawakami K 1999 J. Appl. Phys. 86 956
[24]	Shinriki H, Kisu T, Kimura S, Nishioka Y, Kawamoto Y and Mukai K 1990 IEEE Trans. Electron Devices 37 1939

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Temperature dependences of optical properties, chemical composition, structure, and laser damage in Ta2O5 films

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Temperature dependences of optical properties, chemical composition, structure, and laser damage in Ta₂O₅ films