Please wait a minute...
Chin. Phys. B, 2011, Vol. 20(9): 098501    DOI: 10.1088/1674-1056/20/9/098501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

Xu Xiao-Bo(徐小波), Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base—collector bias, and the hole density at the base—collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart.
Keywords:  saturation effect      heterojunction bipolar transistor      SiGe      silicon-on-insulator  
Received:  01 April 2011      Revised:  09 May 2011      Accepted manuscript online: 
PACS:  85.30.Pq (Bipolar transistors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.-z (Semiconductor devices)  

Cite this article: 

Xu Xiao-Bo(徐小波), Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊) A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects 2011 Chin. Phys. B 20 098501

[1] Avenier G, Fregonese S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T and Chantre A 2008 IEEE Trans. Electron Devices 55 585
[2] Fregonese S, Avenier G, Maneux, C, Chantre A and Zimmer T 2006 IEEE Trans. Electron Devices 53 296
[3] Xu X B, Zhang H M, Hu H Y, Xu L J and Ma J L 2011 Acta Phys. Sin. 60 078502 (in Chinese)
[4] Xu X B, Zhang H M, Hu H Y, Ma J L and Xu L J 2011 Chin. Phys. B 20 018502
[5] Xu X B, Zhang H M, Hu H Y and Qu J T 2011 Chin. Phys. B 20 058503
[6] Xu X B, Zhang H M, Hu H Y and Ma J L 2011 Chin. Phys. B 20 058502
[7] Kull G M, Nagel L W, Lee S W, Lloyd P, Prendergast E J and Dirks H 1985 IEEE Trans. Electron Devices 32 1103
[8] de Graaff H C and Kloosterman W J 1995 IEEE Trans. Electron Devices 42 274
[9] Paasschens J C J, Kloosterman W J, Havens R J and de Graaff H C 2001 IEEE J. Solid St. Circ. 36 1390
[10] Kirk C T Jr. 1962 IRE Trans. Electron Dev. 9 164
[1] Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors
Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Chin. Phys. B, 2022, 31(8): 086106.
[2] An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors
Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智). Chin. Phys. B, 2022, 31(6): 068502.
[3] Impact of STI indium implantation on reliability of gate oxide
Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成). Chin. Phys. B, 2022, 31(2): 028505.
[4] Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation
Xinxin Li(李欣欣), Zhen Deng(邓震), Sen Wang(王森), Jinbiao Liu(刘金彪), Jun Li(李俊), Yang Jiang(江洋), Ziguang Ma(马紫光), Chunhua Du(杜春花), Haiqiang Jia(贾海强), Wenxin Wang(王文新), and Hong Chen(陈弘). Chin. Phys. B, 2021, 30(9): 096104.
[5] High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing
Ying Zan(昝颖), Yong-Liang Li(李永亮), Xiao-Hong Cheng(程晓红), Zhi-Qian Zhao(赵治乾), Hao-Yan Liu(刘昊炎), Zhen-Hua Hu(吴振华), An-Yan Du(都安彦), Wen-Wu Wang(王文武). Chin. Phys. B, 2020, 29(8): 087303.
[6] Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims
Huanming Wang(王焕明), Sen Sun(孙森), Jiayin Xu(徐家胤), Xiaowei Lv(吕晓伟), Yuan Wang(汪渊), Yong Peng(彭勇), Xi Zhang(张析), Gang Xiang(向钢). Chin. Phys. B, 2020, 29(5): 057504.
[7] Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor
Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣). Chin. Phys. B, 2020, 29(2): 028501.
[8] Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout
Rui Chen(陈蕊), Dong-Yue Jin(金冬月), Wan-Rong Zhang(张万荣), Li-Fan Wang(王利凡), Bin Guo(郭斌), Hu Chen(陈虎), Ling-Han Yin(殷凌寒), Xiao-Xue Jia(贾晓雪). Chin. Phys. B, 2019, 28(9): 098502.
[9] Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞). Chin. Phys. B, 2019, 28(7): 076106.
[10] Research on the radiation hardened SOI devices with single-step Si ion implantation
Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌). Chin. Phys. B, 2018, 27(4): 048503.
[11] Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation
Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选). Chin. Phys. B, 2018, 27(2): 028501.
[12] Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET
Xin Xie(解鑫), Da-Wei Bi(毕大伟), Zhi-Yuan Hu(胡志远), Hui-Long Zhu(朱慧龙), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌). Chin. Phys. B, 2018, 27(12): 128501.
[13] Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥). Chin. Phys. B, 2018, 27(10): 108501.
[14] Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展). Chin. Phys. B, 2017, 26(9): 096103.
[15] Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout
Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进), Jin-Zhong Zhang(张金中), Yan-Ling Shi(石艳玲). Chin. Phys. B, 2017, 26(9): 098502.
No Suggested Reading articles found!