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Chin. Phys. B, 2011, Vol. 20(4): 047802    DOI: 10.1088/1674-1056/20/4/047802
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Ellipsometric analysis and optical absorption characterization of gallium phosphide nanoparticulate thin film

Zhang Qi-Xian(章启贤)a)†, Wei Wen-Sheng(魏文生)b), and Ruan Fang-Ping(阮方平) a)
a Physics Group, Wuwei No. 1 Middle School of Anhui Province, Wuwei 238300, China; b Mathematics Group, Wuwei No. 1 Middle School of Anhui Province, Wuwei 238300, China
Abstract  Gallium phosphide (GaP) nanoparticulate thin films were easily fabricated by colloidal suspension deposition via GaP nanoparticles dispersed in N,N-dimethylformamide. The microstructure of the film was performed by x-ray diffraction, high resolution transmission electron microscopy and field emission scanning electron microscopy. The film was further investigated by spectroscopic ellipsometry. After the model GaP+void|SiO2 was built and an effective medium approximation was adopted, the values of the refractive index n and the extinction coefficient k were calculated for the energy range of 0.75 eV–4.0 eV using the dispersion formula in DeltaPsi2 software. The absorption coefficient of the film was calculated from its k and its energy gaps were further estimated according to the Tauc equation, which were further verified by its fluorescence spectrum measurement. The structure and optical absorption properties of the nanoparticulate films are promising for their potential applications in hybrid solar cells.
Keywords:  ellipsometry      optical energy gaps      gallium phosphide      particulate thin film  
Received:  23 September 2010      Revised:  10 November 2010      Accepted manuscript online: 
PACS:  78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)  
  78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters)  
  78.20.-e (Optical properties of bulk materials and thin films)  
  07.60.Fs (Polarimeters and ellipsometers)  

Cite this article: 

Zhang Qi-Xian(章启贤), Wei Wen-Sheng(魏文生), and Ruan Fang-Ping(阮方平) Ellipsometric analysis and optical absorption characterization of gallium phosphide nanoparticulate thin film 2011 Chin. Phys. B 20 047802

[1] Zhang Q, Zhang Z and Zhou Z 2008 Appl. Phys. B 93 589
[2] Liu Z G, Bai Y J, Cui D L, Hao X P, Wang L M, Wang Q L and Xu X G 2002 J. Cryst. Growth 242 486
[3] Beck A L, Collins C J, Wang S, Yang B, Campbell J C, Yulius A, Chen A and Woodall J M 2002 in Lasers and Electro-Optics Society, 2002 LEOS 2002 The 15th Annual Meeting of the IEEE, Vol. 2 p. 837
[4] Brus L E 1983 J. Chem. Phys. 79 5566
[5] Wang Y and Herron N 1987 J. Phys. Chem. 91 257
[6] Leung K M 1986 Phys. Rev. A 33 2461
[7] Chen L Y, Luo T, Huang M X, Gu Y L, Shi L and Qian Y T 2004 Solid State Commun. 132 667
[8] Gao S M, Cui D L, Huang B B and Jiang M H 1998 J. Cryst. Growth 192 89
[9] Zhang Q X and Zhang Z C 2008 Appl. Phys. A 91 631
[10] Zhang Q X, Zhang Z C and Wang B P 2008 J. Phys. D: Appl. Phys. 41 185403
[11] Mukherjee B and Ravishankar N 2007 Nanotechnology 18 025603
[12] Kim T W, Lee D U and Yoon Y S 2000 J. Appl. Phys. 88 3759
[13] Wong E M and Searson P C 1999 Appl. Phys. Lett. 74 2939
[14] Gittins D I, Susha A S, Schoeler B and Caruso F 2002 Adv. Mater. 14 508
[15] Sathaye S D, Patil K R, Paranjape D V and Padalkar S R 2001 Mater. Res. Bull. 36 1149
[16] Lin Y Y, Mo D, Gong K C and Zhang G P 1993 Chin. Phys. 2 816
[17] Zhang X J, Ma H L, Li Y X, Wang Q P, Ma J, Zong F J and Xiao H D 2006 Chin. Phys. 15 2385
[18] Gao X Y, Feng H L, Ma J M and Zhang Z Y 2010 Chin. Phys. B 19 090701
[19] Wang B P, Zhang Z C and Zhang N 2010 Solid State Sciences 12 1188
[20] Cheyns D, Vasseur K, Rolin C, Genoe J, Poortmans J and Heremans P 2008 Nanotechnology 19 424016
[21] Krebs F C, Thomann Y, Thomann R and Andreasen J W 2008 Nanotechnology 19 424013
[22] Beek W J E, Wienk M M and Janssen R A J 2004 Adv. Mater. 16 1009
[23] Beek W J E, Wienk M M and Janssen R A J 2005 Adv. Funct. Mater. 16 1112
[24] Arango A C, Johnson L R, Bliznyuk V N, Schlesinger Z, Carter S A and Hörhold H H 2000 Adv. Mater. 12 1689
[25] Huynh W U, Dittmer J J and Alivisatos A P 2002 Science 295 2425
[26] Forouhi A R and Bloomer I 1986 Phys. Rev. B 34 7018
[27] Kleinman D A and Spitzer W G 1960 Phys. Rev. 118 110
[28] Pankove J I 1971 Optical Processes in Semiconductors (New Jersey: Prentice-Hall) p. 88
[29] Swanepoel R 1983 J. Phys. E: Sci. Instrum. 16 1214
[30] Zaki M F 2008 J. Phys. D: Appl. Phys. 41 175404
[31] Sun Z, Tay B K and Lau S P 2000 Diam. Relat. Mater. 9 1979
[32] Jayasimhadri M, Cho E J, Jang K W, Lee H S and Kim S I 2008 J. Phys. D: Appl. Phys. 41 175101
[33] Yue L Y, Zhang Z C and Chen X 2006 Trans. Nonferrous Met. Soc. China 16 863 endfootnotesize
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