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Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts |
Lü Yuan-Jie(吕元杰)a), Lin Zhao-Jun(林兆军) a)†, Zhang Yu(张宇)a), Meng Ling-Guo(孟令国)a), Cao Zhi-Fang(曹芝芳)a), Luan Chong-Biao(栾崇彪) a), Chen Hong(陈弘)b), and Wang Zhan-Guo(王占国)c) |
a School of Physics, Shandong University, Jinan 250100, China; b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; c Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract Ni Schottky contacts on AlGaN/GaN heterostructures have been fabricated. The samples are then thermally treated in a furnace with N2 ambient at 600 $^\circ$C for different times (0.5, 4.5, 10.5, 18, 33, 48 and 72 h). Current-voltage (I–V) and capacitance–voltage (C–V) relationships are measured, and Schrödinger's and Poisson's equations are self-consistently solved to obtain the characteristic parameters related to AlGaN/GaN heterostructure Schottky contacts: the two-dimensional electron gas (2DEG) sheet density, the polarization sheet charge density, the 2DEG distribution in the triangle quantum well and the Schottky barrier height for each thermal stressing time. Most of the above parameters reduce with the increase of stressing time, only the parameter of the average distance of the 2DEG from the AlGaN/GaN interface increases with the increase of thermal stressing time. The changes of the characteristic parameters can be divided into two stages. In the first stage the strain in the AlGaN barrier layer is present. In this stage the characteristic parameters change rapidly compared with those in the second stage in which the AlGaN barrier layer is relaxed and no strain is present.
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Received: 11 September 2010
Revised: 17 November 2010
Accepted manuscript online:
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PACS:
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71.55.Eq
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(III-V semiconductors)
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73.20.At
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(Surface states, band structure, electron density of states)
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77.22.Gm
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(Dielectric loss and relaxation)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10774090) and the National Basic Research Program of China (Grant No. 2007CB936602). |
Cite this article:
Lü Yuan-Jie(吕元杰), Lin Zhao-Jun(林兆军), Zhang Yu(张宇), Meng Ling-Guo(孟令国), Cao Zhi-Fang(曹芝芳), Luan Chong-Biao(栾崇彪), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 2011 Chin. Phys. B 20 047105
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