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Chin. Phys. B, 2011, Vol. 20(1): 017204    DOI: 10.1088/1674-1056/20/1/017204

Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)

Chen Yi-Xin(陈依新),Shen Guang-Di(沈光地),Guo Wei-Ling(郭伟玲), Xu Chen(徐晨), and Li Jian-Jun(李建军)
Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
Abstract  The reasons for low output power of AlGaInP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency (EQE) has serious impaction on the internal quantum efficiency (IQE), because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.
Keywords:  AlGaInP light emitting diodes      internal quantum efficiency      heat      light power  
Received:  12 May 2010      Revised:  01 August 2010      Accepted manuscript online: 
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  82.45.Qr (Electrodeposition and electrodissolution)  
Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03A121), the National Basic Research Program of China (Grant No. 2006CB604900).

Cite this article: 

Chen Yi-Xin(陈依新),Shen Guang-Di(沈光地),Guo Wei-Ling(郭伟玲), Xu Chen(徐晨), and Li Jian-Jun(李建军) Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs) 2011 Chin. Phys. B 20 017204

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