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Chin. Phys. B, 2010, Vol. 19(1): 017306    DOI: 10.1088/1674-1056/19/1/017306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

Ren Fan(任凡), Hao Zhi-Biao(郝智彪), Wang Lei(王磊), Wang Lai(汪莱), Li Hong-Tao (李洪涛), and Luo Yi(罗毅)
Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China;State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Abstract  SiN$_x$ is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN$_x$ passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN$_x$ films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.
Keywords:  SiNx passivation      plasma-enhanced chemical vapour deposition      AlGaN/GaN heterostructure      current collapse  
Received:  20 May 2009      Revised:  22 June 2009      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  52.77.Dq (Plasma-based ion implantation and deposition)  
  73.21.-b (Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.65.Rv (Passivation)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60536020 and 60723002), the National Basic Research Program of China (Grant Nos. 2006CB302800 and 2006CB921106), the National High Technology Research and Development Program for Advanced Materials of China (Grant No. 2006AA03A105), and the Major Project of Beijing Municipal Science and Technology Commission, China (Grant No. D0404003040321).

Cite this article: 

Ren Fan(任凡), Hao Zhi-Biao(郝智彪), Wang Lei(王磊), Wang Lai(汪莱), Li Hong-Tao (李洪涛), and Luo Yi(罗毅) Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors 2010 Chin. Phys. B 19 017306

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