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Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors |
Ren Fan(任凡), Hao Zhi-Biao(郝智彪)†, Wang Lei(王磊), Wang Lai(汪莱), Li Hong-Tao (李洪涛), and Luo Yi(罗毅) |
Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China;State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China Department of Electronic Engineering, Tsinghua University, Beijing 100084, China |
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Abstract SiN$_x$ is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN$_x$ passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN$_x$ films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.
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Received: 20 May 2009
Revised: 22 June 2009
Accepted manuscript online:
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PACS:
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85.30.Tv
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(Field effect devices)
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52.77.Dq
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(Plasma-based ion implantation and deposition)
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73.21.-b
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(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.65.Rv
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(Passivation)
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Fund: Project supported by the National
Natural Science Foundation of China (Grant Nos. 60536020 and
60723002), the National Basic Research Program of China (Grant Nos.
2006CB302800 and 2006CB921106), the National High Technology
Research and Development Program for Advanced Materials of China
(Grant No. 2006AA03A105), and the Major Project of Beijing Municipal
Science and Technology Commission, China (Grant No.
D0404003040321). |
Cite this article:
Ren Fan(任凡), Hao Zhi-Biao(郝智彪), Wang Lei(王磊), Wang Lai(汪莱), Li Hong-Tao (李洪涛), and Luo Yi(罗毅) Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors 2010 Chin. Phys. B 19 017306
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[1] |
Baliga B J 1996 IEEE Trans. Electron Devices 43 1717
|
[2] |
Liu J, Zhou Y G, Zhu J, Lau K M and Chen K J 2006 IEEE Electron Device Lett. 27 10
|
[3] |
Chumbes E M, Smart J A, Prunty T and Shealy J R 2000 Proc. Int. Electron Device Meeting p385
|
[4] |
Yue Y Z, Hao Y, Zhang J C, Feng Q, Ni J Y and Ma X H 2008 Chin. Phys. B 17 1405
|
[5] |
Chang M J and Lee J L 2005 Appl. Phys. Lett. 85 172101
|
[6] |
Tan W S, Houston P A, Hill G, Airey R J and Parbook P J 2004 J. Electron Mat. 33 400
|
[7] |
Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J and Luo Y 2008 Acta Phys. Sin. 57 7238 (in Chinese)
|
[8] |
Mittereder J A, Binari S C, Klein P B, Roussos J A, Katzer D S, Storm D F, Koleske D D, Wickenden A E and Henry R L 2003 Appl. Phys. Lett. 83 1650
|
[9] |
Bernát J, Wolter M, Javorka P, Fox A, Marso M and Kordo P 2004 Solid-State Electron. 48 1825
|
[10] |
Binari S C, Ikossi K, Roussos J A, Kruppa W, Park D, Dietrich H B, Koleske D D, Wickenden A E and Henry R L 2001 IEEE Trans. Electron Devices 48
|
|
465
|
[11] |
Kohn E, Daumiller I, Schmid P, Nguyen N X and Nguyen C N 2001 Electron. Lett. 35 1022
|
[12] |
Daumiller I, Theron D, Gaqui\`ere C, Vescan A, Dietrich R, Wieszt A, Leier H, Vetury R, Mishra U K, Smorchkova I P, Keller S, Nguyen N X, Nguyen C N
|
|
and Kohn E 2001 IEEE Electron Device Lett. 22 62
|
[13] |
Myers F R and Cale T S 1992 J. Electrochem. Soc. 139] 3587
|
[14] |
Myers F R, Ramaswami M and Cale T S 1994 J. Electrochem. Soc. 141 1313
|
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