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Chin. Phys. B, 2010, Vol. 19(1): 017202    DOI: 10.1088/1674-1056/19/1/017202

Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition

Yang Hang-Sheng(杨杭生), Nie An-Min(聂安民), and Qiu Fa-Min(邱发敏)
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Abstract  Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasma-enhanced chemical vapour deposition. It was found that the introduction of O2 into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B2H6 concentration of 2.5% during film deposition, the critical O2 concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4%, while that for the growth of cubic boron nitride was higher than 2.1%. Moreover, the infrared absorption peak observed at around 1230--1280 cm-1, frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.
Keywords:  cubic boron nitride films      infrared spectroscopy      plasma-enhanced chemical vapour deposition  
Received:  16 July 2009      Revised:  27 July 2009      Accepted manuscript online: 
PACS:  68.55.-a (Thin film structure and morphology)  
  68.55.A- (Nucleation and growth)  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  78.30.Hv (Other nonmetallic inorganics)  
  78.66.Li (Other semiconductors)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50772096) and the Educational Department of Zhejiang Province, China (Grant No. 20061365).

Cite this article: 

Yang Hang-Sheng(杨杭生), Nie An-Min(聂安民), and Qiu Fa-Min(邱发敏) Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition 2010 Chin. Phys. B 19 017202

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