Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition

doi:10.1088/1674-1056/19/1/017202

Abstract Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasma-enhanced chemical vapour deposition. It was found that the introduction of O₂ into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B₂H₆ concentration of 2.5% during film deposition, the critical O₂ concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4%, while that for the growth of cubic boron nitride was higher than 2.1%. Moreover, the infrared absorption peak observed at around 1230--1280 cm^-1, frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.

Keywords: cubic boron nitride films infrared spectroscopy plasma-enhanced chemical vapour deposition

Received: 16 July 2009
Revised: 27 July 2009
Accepted manuscript online:

PACS:	68.55.-a	(Thin film structure and morphology)
	68.55.A-	(Nucleation and growth)
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	78.30.Hv	(Other nonmetallic inorganics)
	78.66.Li	(Other semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50772096) and the Educational Department of Zhejiang Province, China (Grant No. 20061365).

Cite this article:

Yang Hang-Sheng(杨杭生), Nie An-Min(聂安民), and Qiu Fa-Min(邱发敏) Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition 2010 Chin. Phys. B 19 017202

[1]	Yoshida T 1996 Diamond Relat. Mater. 5 501
[2]	Mirkarimi P B, McCarty K F and Medlin D L 1997 Mater. Sci. Eng. R 21 47
[3]	Samantaray C B and Singh R N 2005 Int. Mater. Rev. 50 313
[4]	Zhang X W, You J B and Chen N F 2007 J. Inorgan. Mater. 22 385
[5]	Yang H S, Nie A M and Zhang J Y 2009 Acta Phys. Sin. 58 1364 (in Chinese)
[6]	Matsumoto S and Zhang W J 2000 Jpn. J. Appl. Phys. (Part 2) 39 L442
[7]	Yang H S, Iwamoto C and Yoshida T 2003 J. Appl. Phys. 94 1248
[8]	Zhang X W, Boyen H G, Deyneka N, Ziemann P, Banhart F and Schreck M 2003 Nature Mater. 2 312
[9]	Nose K, Yang H S and Yoshida T 2005 Diamond Relat. Mater. 14 1297
[10]	Nose K, Oba H and Yoshida T 2006 Appl. Phys. Lett. 89 112124
[11]	Yang H S, Iwamoto C and Yoshida T 2007 Diamond Relat. Mater. 16 642
[12]	Zhang W J, Bello I, Lifshitz Y, Chan K M, Wu Y, Chan C Y, Meng X M and Lee S T 2004 Appl. Phys. Lett. 85 1344
[13]	Yang H S and Xie Y J 2007 Acta Phys. Sin. 56 5400 (in Chinese)
[14]	Tian J Z, Lu F X and Xia L F 2001 Acta Phys. Sin. 50 210 (in Chinese)
[15]	Ma X Y, Yue J S, He D Y and Chen G H 1998 Acta Phys. Sin. 47 871 (in Chinese)
[16]	Ulrich S, Nold E, Sell K, Stüber M, Ye J and Ziebert C 2006 Surf. Coat. Technol. 200 6465
[17]	Lattemann M, Ulrich S and Ye J 2006 Thin Solid Films 515 1058
[18]	Zapien J A, Collins R W and Messier R 2002 J. Vac. Sci. Technol. A 20 1395
[19]	Yang H S, Iwamoto C and Yoshida T 2002 Thin Solid Films 407 67
[20]	Gielisse P J, Mitra S S, Plendl J N, Griffs R D, Mansur L C, Marshall R and Pascoe E A 1967 Phys. Rev. 155 1039
[21]	Yang H S, Iwamoto C and Yoshida T 2002 J. Appl. Phys. 91 6695
[22]	Ullmann J, Baglin J E E and Kellock A J 1998 J. Appl. Phys. 83 2980
[23]	Yang H S, Zhang Y, Zhang X B and Xu Y B 2007 Appl. Phys. Lett. 91 061907
[24]	Yang H S, Zhang J Y, Nie A M and Zhang X B 2008 Chin. Phys. B 17 3453
[25]	Turkevich V Z 1999 Diamond Relat. Mater. 8 2032
[26]	Hubert H, Gravie L, Buseck P, Petuskey W and McMillan P 1996 12th Int. Symp. on Boron, Borides and Related Compounds p56 Baden, Austria, August 25--30 1996
[27]	Perevertailo V M, Smekhnov A A, Kuzenkov S P and Loginova O B 1994 J. Superhard Mater. 16 18
[28]	Amagi S, Takahashi D and Yoshida T 1997 Appl. Phys. Lett. 70 946
[29]	Orellana W and Chacham H 2000 Phys. Rev. B 62 10135
[30]	Pisarski W A, Gorvczka T, Wodecka-Dus B, Plonska M and Pisarska J 2005 Mater. Sci. Eng. B 122 94
[31]	Schneider J R and Shrader B 1975 Mol. Struct. 29 1
[32]	Nagai N, Imai T, Terada K, Seki H, Okumura H, Fujino H, Yamamoto T, Nishiyama I and Hatta A 2002 Surf. Interface Anal. 34 545

[1]	Optical study on topological superconductor candidate Sr-doped Bi₂Se₃ Jialun Liu(刘佳伦), Chennan Wang(王晨南), Tong Lin(林桐), Liye Cao(曹立叶), Lei Wang(王蕾), Jiaji Li(李佳吉), Zhen Tao(陶镇), Nan Shen(申娜), Rina Wu(乌日娜), Aifang Fang(房爱芳), Nanlin Wang(王楠林), and Rongyan Chen(陈荣艳). Chin. Phys. B, 2022, 31(11): 117402.
[2]	Optical investigation of topological semimetal SrMnSb₂ Zi-Yang Qiu(邱子阳), Zhi-Yu Liao(廖知裕), Xiang-Gang Qiu(邱祥冈). Chin. Phys. B, 2019, 28(4): 047801.
[3]	Effect of metal fluorides on chromium ions doped bismuth borate glasses for optical applications L Haritha, K Chandra Sekhar, R Nagaraju, G Ramadevudu, Vasanth G Sathe, Md. Shareefuddin. Chin. Phys. B, 2019, 28(3): 038101.
[4]	Magneto optics and time resolved terahertz spectrocopy T Dong(董涛), Z G Chen(谌志国), N L Wang(王楠林). Chin. Phys. B, 2018, 27(7): 077501.
[5]	Optical study of charge dynamics in CaCo₂As₂ Wei Zhang(张威), Bing Xu(许兵), Run Yang(杨润), Jin-Yun Liu(刘金云), Hao Yang(杨浩), Xiang-Gang Qiu(邱祥冈). Chin. Phys. B, 2016, 25(5): 057201.
[6]	In-plane optical spectral weight redistribution in the optimally doped Ba_0.6K_0.4Fe₂As₂ superconductor Xu Bing (许兵), Dai Yao-Min (戴耀民), Xiao Hong (肖宏), R. P. S. M. Lobo, Qiu Xiang-Gang (邱祥冈). Chin. Phys. B, 2014, 23(8): 087401.
[7]	Dielectric and infrared properties of SrTiO₃ single crystal doped by 3d (V, Mn, Fe, Ni) and 4f (Nd, Sm, Er) ions S. Maletic, D. Maletic, I. Petronijevic, J. Dojcilovic, D. M. Popovic. Chin. Phys. B, 2014, 23(2): 026102.
[8]	OH^- absorption and nonvolatile holographic storage properties in Mg:Ru:Fe:LiNbO₃ crystal as a function of Mg concentration Xu Chao (徐超), Zhang Chun-Lei (张春雷), Dai Li (代丽), Leng Xue-Song (冷雪松), Xu Lei (许磊), Xu Yu-Heng (徐玉恒). Chin. Phys. B, 2013, 22(5): 054203.
[9]	Evolution of the 251 cm^-1 infrared phonon mode with temperature in Ba_0.6K_0.4Fe₂As₂ Dai Yao-Min(戴耀民), Xu Bing(许兵), Shen Bing(沈冰), Xiao Hong(肖宏), Lobo R. P. S. M, and Qiu Xiang-Gang(邱祥冈) . Chin. Phys. B, 2012, 21(7): 077403.
[10]	Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD Hou Guo-Fu(侯国付), Geng Xin-Hua(耿新华), Zhang Xiao-Dan(张晓丹), Sun Jian(孙建), Zhang Jian-Jun(张建军), and Zhao Ying(赵颖). Chin. Phys. B, 2011, 20(7): 077802.
[11]	Effects of SiN_x on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors Ren Fan(任凡), Hao Zhi-Biao(郝智彪), Wang Lei(王磊), Wang Lai(汪莱), Li Hong-Tao (李洪涛), and Luo Yi(罗毅) . Chin. Phys. B, 2010, 19(1): 017306.
[12]	In situ infrared spectroscopic study of cubicboron nitride thin film delamination Yang Hang-Sheng(杨杭生), Zhang Jian-Ying(张健英), Nie An-Min(聂安民), and Zhang Xiao-Bin(张孝彬). Chin. Phys. B, 2008, 17(9): 3453-3458.
[13]	Host dependent thermal stability and frequency upconversion of Er³⁺-doped heavy metal xyfluoride germanate glasses Xu Shi-Qing (徐时清), Fang Da-Wei (方达伟), Zhang Zai-Xuan (张在宣), Zhao Shi-Long (赵士龙), Zhang Li-Yan (张丽艳), Wang Bao-Ling (王宝玲), Jiang Zhong-Hong (姜中宏). Chin. Phys. B, 2005, 14(11): 2246-2250.
[14]	ANALYSIS OF THE X-RAY PHOTOELECTRON SPECTRA OF a-SiOCF FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION Ding Shi-jin (丁士进), Wang Peng-fei (王鹏飞), Zhang Wei (张卫), Wang Ji-tao (王季陶), Wei William Lee. Chin. Phys. B, 2001, 10(4): 324-328.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition

Cite this article:

Online attention