Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN

doi:10.1088/1674-1056/20/6/067303

Abstract Thin tungsten nitride (WN_x) films were produced by reactive DC magnetron sputtering of tungsten in an Ar-N₂ gas mixture. The films were used as Schottky contacts on AlGaN/GaN heterostructures. The Schottky behaviours of WN_x contact was investigated under various annealing conditions by current-voltage (I-V) measurements. The results show that the gate leakage current was reduced to 10^-6 A/cm² when the N₂ flow is 400 mL/min. The results also show that the WN_x contact improved the thermal stability of Schottky contacts. Finally, the current transport mechanism in WN_x/AlGaN/GaN Schottky diodes has been investigated by means of I-V characterisation technique at various temperatures between 300 K and 523 K. A TE model with a Gaussian distribution of Schottky barrier heights (SBHs) is thought to be responsible for the electrical behaviour at temperatures lower than 523 K.

Keywords: AlGaN/GaN heterostructures tungsten nitride Schottky contacts

Received: 09 November 2010
Revised: 24 February 2011
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.40.Sx	(Metal-semiconductor-metal structures)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)

Cite this article:

Liu Fang(刘芳), Qin Zhi-Xin(秦志新), Xu Fu-Jun(许福军), Zhao Sheng(赵胜), Kang Xiang-Ning(康香宁), Shen Bo(沈波), and Zhang Guo-Yi(张国义) Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN 2011 Chin. Phys. B 20 067303

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Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN

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