A novel structure of a high current gain 4H-SiC BJT with a buried layer in base
Zhang You-Run(张有润)†, Zhang Bo(张波), Li Zhao-Ji(李肇基), Deng Xiao-Chuan(邓小川), and Liu Xi-Ling(刘曦麟)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic[1.8mm] Science and Technology of China, Chengdu 610054, China
Abstract In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.
Received: 10 November 2008
Revised: 20 January 2009
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Cite this article:
Zhang You-Run(张有润), Zhang Bo(张波), Li Zhao-Ji(李肇基), Deng Xiao-Chuan(邓小川), and Liu Xi-Ling(刘曦麟) A novel structure of a high current gain 4H-SiC BJT with a buried layer in base 2009 Chin. Phys. B 18 3995
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