Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China; Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China
Abstract This paper investigates the effects of concentration on the crystalline structure, the morphology, and the charge carrier mobility of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs). The RR-P3HT FETs with RR-P3HT as an active layer with different concentrations of RR-P3HT solution from 0.5 wt% to 2 wt% are prepared. The results indicate that the performance of RR-P3HT FETs improves drastically with the increase of RR-P3HT weight percentages in chloroform solution due to the formation of more microcrystalline lamellae and bigger nanoscale islands. It finds that the field-effect mobility of RR-P3HT FET with 2 wt% can reach 5.78×10-3 cm2/Vs which is higher by a factor of 13 than that with 0.5 wt%. Further, an appropriate thermal annealing is adopted to improve the performance of RR-P3HT FETs. The field-effect mobility of RR-P3HT FETs increases drastically to 0.09 cm2/Vs by thermal annealing at 150 ℃, and the value of on/off current ratio can reach 104.
Received: 05 December 2008
Revised: 05 January 2009
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the National
Natural Science Foundation of China (Grant Nos 10774013, 10804006),
the National High Technology Research and Development Program of
China (Grant No 2006AA03Z0412), the Research Fund for the Doctoral
Program of Higher Education of China (Grant No 20070004024); The
Research Fund for the Youth Scholars of the Doctoral Program of
Higher Education (Grant No 20070004031), the Beijing NOVA Program
(Grant No 2007A024) and the 111 Project (Grant No B08002).
Cite this article:
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才), and Xu Xu-Rong(徐叙瑢) Effects of concentration and annealing on the performance of regioregular poly(3-hexylthiophene) field-effect transistors 2009 Chin. Phys. B 18 3568
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