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Chin. Phys. B, 2009, Vol. 18(2): 763-767    DOI: 10.1088/1674-1056/18/2/058
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device

Zhang You-Run(张有润), Zhang Bo(张波), Li Ze-Hong(李泽宏), Lai Chang-Jin(赖昌菁), and Li Zhao-Ji(李肇基)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor (BJT-BSIT) compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25℃--85℃ and 20% in -55℃--25℃.
Keywords:  bipolar junction transistor-bipolar static induction transistor      thermal analytic model      current gain  
Received:  07 July 2008      Revised:  18 July 2008      Accepted manuscript online: 
PACS:  85.30.Pq (Bipolar transistors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  

Cite this article: 

Zhang You-Run(张有润), Zhang Bo(张波), Li Ze-Hong(李泽宏), Lai Chang-Jin(赖昌菁), and Li Zhao-Ji(李肇基) Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device 2009 Chin. Phys. B 18 763

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