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Chin. Phys. B, 2008, Vol. 17(8): 3083-3086    DOI: 10.1088/1674-1056/17/8/052
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Fabrication of high-quality submicron Nb/Al--AlOx/Nb tunnel junctions

Yu Hai-Feng(于海峰), Cao Wen-Hui(曹文会), Zhu Xiao-Bo(朱晓波), Yang Hai-Fang(杨海方), Yu Hong-Wei(于洪伟), Ren Yu-Feng (任育峰), Gu Chang-Zhi(顾长志), Chen Geng-Hua(陈赓华), and Zhao Shi-Ping(赵士平)
Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract  Nb/Al--AlO$_x$/Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality,submicron-sized Nb/Al--AlO$_x$/Nb Josephson junctions. The technique follows the well-known selective Nb etching process and produces high-quality junctions with $V_m$=100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm$^2$, which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature dependence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions.
Keywords:  Nb junctions      fabrication      superconducting qubit      macroscopic quantum phenomena  
Received:  16 January 2008      Revised:  25 March 2008      Accepted manuscript online: 
PACS:  74.50.+r (Tunneling phenomena; Josephson effects)  
  74.25.Sv (Critical currents)  
  74.78.Fk (Multilayers, superlattices, heterostructures)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 10474129 and 10534060) and the Ministry of Science and Technology of China (Grant Nos 2006CB601007 and 2006CB921107).

Cite this article: 

Yu Hai-Feng(于海峰), Cao Wen-Hui(曹文会), Zhu Xiao-Bo(朱晓波), Yang Hai-Fang(杨海方), Yu Hong-Wei(于洪伟), Ren Yu-Feng (任育峰), Gu Chang-Zhi(顾长志), Chen Geng-Hua(陈赓华), and Zhao Shi-Ping(赵士平) Fabrication of high-quality submicron Nb/Al--AlOx/Nb tunnel junctions 2008 Chin. Phys. B 17 3083

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