Abstract Halo structure is added to sub-100 nm surrounding-gate metal--oxide--semiconductor field- effect-transistors (MOSFETs) to suppress short channel effect. This paper develops the analytical surface potential and threshold voltage models based on the solution of Poisson's equation in fully depleted condition for symmetric halo-doped cylindrical surrounding gate MOSFETs. The performance of the halo-doped device is studied and the validity of the analytical models is verified by comparing the analytical results with the simulated data by three dimensional numerical device simulator Davinci. It shows that the halo doping profile exhibits better performance in suppressing threshold voltage roll-off and drain-induced barrier lowering, and increasing carrier transport efficiency. The derived analytical models are in good agreement with Davinci.
Received: 10 April 2008
Revised: 30 June 2008
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 10771168), the State
Key Development Program for Basic Research of China (Grant No
2005CB321701) and Shaanxi Natural Science Foundation Program of
China (Grant No SJ08-ZT13).
Cite this article:
Li Zun-Chao (李尊朝) Performance and analytical modelling of halo-doped surrounding gate MOSFETs 2008 Chin. Phys. B 17 4312
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