Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide
Wang Chao(王超)† , Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Ma Ge-Lin(马格林), Guo Hui(郭辉), and Xu Da-Qing(徐大庆)
Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
Abstract The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry (SIMS). Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed after 1650℃ annealing for both p- and n-type samples. Atomic force microscopy (AFM) is applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650℃ annealing. The surface roughness results from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface are investigated using x-ray photoelectron spectroscopy (XPS). The results of C 1s and Si 2p core-level spectra are presented in detail to demonstrate the evaporation of Si from the wafer and the deposition of SiO2 on the sample surface during annealing.
Received: 20 December 2006
Revised: 16 January 2007
Accepted manuscript online:
(Clean metal, semiconductor, and insulator surfaces)
Fund: Project supported by the
National Natural Science Foundation of China (Grant No~60376001), the
National Basic Research Program of China (Grant No~2002CB311904) and the
National Defense Basic Research Program of China (Grant No~51327020202).
Cite this article:
Wang Chao(王超), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Ma Ge-Lin(马格林), Guo Hui(郭辉), and Xu Da-Qing(徐大庆) Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide 2007 Chinese Physics 16 2455
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
