Abstract Transparent low-resistance SnO$_{2}$:F films, suitable as a low-emissivity and conducting coating, have been deposited on silica-coated soda lime glass substrates by pyrosol process. SnCl$_{4}\cdot $5H$_{2}$O and NH$_{4}$F dissolved in solvent of 50% C$_{2}$H$_{5}$OH/50% H$_{2}$O served as the starting solution. With the parameters such as substrate temperature of 450${^\circ}$C, distance between the nozzle and substrate of 60mm, carrier gas flow rate of 8L/min and deposition time of 5min, the optimized SnO$_{2}$:F films having a sheet resistance of about 2$\Omega$/$\Box$, were deposited repeatedly. The relationship between sheet resistances and infrared transmission spectra of SnO$_{2}$:F films is shown schematically.
Received: 15 September 2004
Revised: 21 March 2005
Accepted manuscript online:
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
Cite this article:
Qu Yi (曲艺), Zhang Xin (张馨), Chen Hong (陈红), Gao Jin-Yue (高锦岳), Zhou Da-Fan (周大凡) Pyrosol process for deposition of fluorine-doped tin dioxide thin films 2005 Chinese Physics 14 1428
A low specific on-resistance SOI MOSFET with dual gates and recessed drain Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Gang-Yi (胡刚毅), Wang Xiao-Wei (王骁玮), Zhang Zheng-Yuan (张正元), Fan Yuan-Hang (范远航), Cai Jin-Yong (蔡金勇), Wang Pei (王沛), Zhou Kun (周坤). Chin. Phys. B, 2013, 22(2): 027304.
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