PHOTOLUMINESCENCE AND RAMAN SCATTERING OF PURE GERMANIUM/SILICON SHORT PERIOD SUPERLATTICE
Ji Zhen-guo (季振国)a, Norikata Usamib, H. Sunamurab, Yasuhiro Shirakib
a State key Laboratory for Silicon Material Zhejiang University, Hangzhou 310027, China; b Research center for Advanced Science and Technology University of Tokyo, Komaba 4-6-1, Tokyo, Japan
Abstract Pure Ge/Si short period superlattice (SPS) samples grown by gas source molecular beam epitaxy (GS-MBE) were studied by photoluminescence and Raman scattering. For SPS samples with Germanium layer thickness (LGe) of 1.5 monolayer (ML), a new band of photoluminescence is observed for silicon layer thickness (LSi) in an intermediate range of 1.9-2.9 nm. In contrast to pure Ge/Si quantum wells, the energy of the new band shows a red-shift with the increase of LSi. Raman scattering results show that when the intensity of the photoluminescence of the new band reaches a maximum, the Raman shift relating the vibration of Si-Si reaches a minimum. It is therefore considered that the new band of the pure Ge/Si SPS is related with some kind of strain relaxation process.
Received: 01 December 1997
Revised: 09 March 1998
Accepted manuscript online:
Ji Zhen-guo (季振国), Norikata Usami, H. Sunamura, Yasuhiro Shiraki, PHOTOLUMINESCENCE AND RAMAN SCATTERING OF PURE GERMANIUM/SILICON SHORT PERIOD SUPERLATTICE 1998 Acta Physica Sinica (Overseas Edition) 7 608
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