NUCLEATION ENHANCEMENT OF DIAMOND FILMS BY ION BOMBARDING AND ELECTRON EMITTING EFFECTS

doi:10.1088/1004-423X/6/7/006

Abstract

Abstract Applying a proper negative bias-voltage onto the substrate, on which diamond lilm is deposited by chemical vapor deposition technique, can greatly improve the nucleation density. While nucle-ation enhancing, both the ion bombardment and electron emission may play an important role sepa-rately. However, for the highest nucleation density, both of the two effects must act together.

Received: 25 October 1996
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	79.20.Kz	(Other electron-impact emission phenomena)

Fund: Project supported by the National Natural Science Foundation of China.

Cite this article:

WANG WAN-LU (王万录), LIAO KE-JUN (廖克俊), ZHANG ZHEN-GANG (张振刚), LIAO MEI-YONG (廖梅勇), M.C.POLO, G.SANCHEZ, J.ESTEVE NUCLEATION ENHANCEMENT OF DIAMOND FILMS BY ION BOMBARDING AND ELECTRON EMITTING EFFECTS 1997 Acta Physica Sinica (Overseas Edition) 6 517

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NUCLEATION ENHANCEMENT OF DIAMOND FILMS BY ION BOMBARDING AND ELECTRON EMITTING EFFECTS

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